Fe3O4 (ferroferric oxide)/p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and preparation method for same

Abstract

The invention relates to a Fe3O4 (ferroferric oxide) / p-Si (p-type silicon) structure capable of regulating and controlling magneto-resistance effect with current and a preparation method for the same. The Fe3O4 / p-Si structure is structurally characterized in that Fe3O4 grows on a p-type silicon single crystal substrate, and the maximum magneto-resistance value of the hetero-structure can reach 40% at the temperature of 100K, in a 50kOe magnetic field and within the current range of 1mA. The preparation method includes the steps of employing a three-target adjustable ultrahigh vacuum magnetron sputtering coating machine produced by SKY Technology Development Co., Ltd. Chinese Academy of Sciences (SKY), and mounting a Fe (ferrum) target with 99.99% purity on a ferromagnetic target, wherein a target material is 2mm in thick, the diameter of the target material is 60mm, and the distance between the target and a substrate support is 10cm; mounting the p-type silicon single crystal substrate on the substrate support above a target head; and obtaining a Fe3O4 sample which grows on the p-type silicon single crystal substrate by controlling conditions such as vacuum degree, sputtering gas, current, voltage, sputtering time and the like. The hetero-structure prepared by the method has large magneto-resistance effect in low current, and the method which is a reactive magnetron sputtering method is simple, practical and beneficial to popularization on industrial production.

Description

technical field [0001] The present invention relates to a kind of Fe with current regulating magnetoresistance effect 3 o 4 / p-Si structure and preparation method, more specifically, a Fe that can control the magnetoresistance effect by current intensity 3 o 4 / p-Si heterostructure and preparation method. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to combine materials with high spin polarizability and semiconductor materials to produce a larger magnetoresistance effect is a problem to be solved. [0003] First-principles calculations show that Fe 3 o 4 , La 1-x A x MnO 3 (LAMO, A is alkaline earth elements Ca, Sr and Ba, etc.), CrO 2 , NiMnSb and other materials have a band structure between metals and insulato...

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Problems solved by technology

In addition, low currents are mostly used in practical applications, which can save energy; and high magnetoresistance values ​​are required to improve the sensitivity of devices, so the research results mentioned above cannot meet the requirements of practical applications.

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