GdN film with large magnetoresistance effect, and preparation method thereof

A magnetoresistance and thin-film technology, applied in the field of spintronics, achieves the effect of simple target selection, simple and practical method, and high target utilization rate

Inactive Publication Date: 2013-05-08
TIANJIN UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the preparation of GdN thin film and its magnetoresistance effect are rarely studied in the world, and the measured magnetoresistance is less than 40% [JOURNAL OF APPLIED PHYSICS106, 063910(2009); PHYSICAL REVIEW B72, 014427(2005)]

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GdN film with large magnetoresistance effect, and preparation method thereof
  • GdN film with large magnetoresistance effect, and preparation method thereof
  • GdN film with large magnetoresistance effect, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] According to the structure and property analysis results that we carry out to the sample prepared in the present invention, the best embodiment of GdN thin film will be described in detail below to target reactive sputtering method:

[0042] 1) The DPS-III ultra-high vacuum multi-pair magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences is used. The base material is a polished MgO(100) single wafer covered with a mask template. Three different targets are used, including Gd target, Al target, and Ag target with a purity of 99.99%, which are respectively installed on three pairs of target heads. Each pair of targets consists of two targets, and the two targets are placed face to face. One is the N pole of the magnetic force line, and the other is the S pole; the axes between the two face-to-face target surfaces of each pair of targets are parallel to each other, and the distance between e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a GdN film with a large magnetoresistance effect, and a preparation method thereof. A reactive magnetron sputtering method is developed, such that a polycrystalline GdN film is prepared. The polycrystalline film is grown on an MgO (100) substrate. Grain boundary density is reduced by using lattice correlation. The film structure is a GdN film with Ag as electrodes and AlN as protective layer. The film has large magnetoresistance effect. Under a temperature of 5K and a magnetic field of 50kOe, a magnetoresistance is -86%. When the film is used as magnetic field control switch, magnetic field sensor, and the like, advantages such as simple target material selection and high target material utilization rate are provided.

Description

technical field [0001] The invention relates to the field of spin electronics, in particular to a GdN (gadolinium nitride) thin film with a large magnetoresistance effect and a preparation method thereof. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. In 2007, the Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Magnetoresistance effects, such as giant magnetoresistance effect (GMR) and tunnel magnetoresistance effect (TMR), are all related to the spin polarizability of materials. From the perspective of application, how to obtain high magnetoresistance effect is still one of the hot issues in the field of spintronics. [0003] Half-metallic ferromagnets, with 100% spin polarization near the Fermi surface, are candidates for spintronic devices. The usual half-metallic ferromagnets are tra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/04
Inventor 米文博段秀峰白海力
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap