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Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth

A technology of thin film materials and bandgap width, which is applied in the field of preparation of cadmium zinc telluride thin film materials, can solve problems such as difficult to guarantee, difficult to increase Zn element content, difficult to control thin film stoichiometry, etc., to achieve the effect of increasing Zn content

Inactive Publication Date: 2012-06-13
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the biggest problem currently encountered is in the deposition of the ternary alloy Cd 1-x Zn x In the Te process, it is difficult to control the stoichiometry of each element in the film, especially the content of Zn element is difficult to increase, and it is difficult to ensure the preparation of Cd with a higher band gap. 1-x Zn x Te film

Method used

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  • Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth
  • Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth
  • Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth

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Embodiment 1

[0022] Clean the glass substrate with an organic solvent such as acetone or alcohol → deionized water → hydrochloric acid → deionized water, and dry it with nitrogen in an ultra-clean environment. Then the glass substrate was fixed on the substrate stage of the magnetron sputtering chamber, and the Cd 0.96 Zn 0.04 The Te target and the Zn target are installed on their respective target guns, and the vacuum of the sputtering chamber is evacuated to 2.9×10 -3 Pa, and then sequentially grow Cd on the glass substrate 0.96 Zn 0.04 Te / Zn / Cd 0.96 Zn 0.04 The thickness of the Te / Zn film is sequentially controlled at 400nm / 50nm / 1000nm / 100nm.

[0023] CD 0.96 Zn 0.04 The magnetron sputtering parameters of the Te film were set as follows: the sputtering power was 36W, the sputtering gas was high-purity Ar gas, the sputtering pressure was 2.4Pa, and the substrate temperature was room temperature.

[0024] The magnetron sputtering parameters of the Zn film were set as follows: the ...

Embodiment 2

[0029] Clean the glass substrate with an organic solvent such as acetone or alcohol → deionized water → hydrochloric acid → deionized water, and dry it with nitrogen in an ultra-clean environment. Then the glass substrate was fixed on the substrate stage of the magnetron sputtering chamber, and the Cd 0.96 Zn 0.04 The Te target and the Zn target are installed on their respective target guns, and the vacuum of the sputtering chamber is evacuated to 2.9×10 -3 Pa, then sequentially grow Zn / Cd on the glass substrate 0.96 Zn 0.04 Te / Zn / Cd 0.96 Zn 0.04 The thickness of the Te / Zn film is sequentially controlled at 10nm / 400nm / 50nm / 1000nm / 100nm.

[0030] Cd 0.96 Zn 0.04 The magnetron sputtering parameters of the Te film were set as follows: the sputtering power was 36W, the sputtering gas was high-purity Ar gas, the sputtering pressure was 2.4Pa, and the substrate temperature was room temperature.

[0031] The magnetron sputtering parameters of the Zn film were set as follows: ...

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Abstract

The invention discloses a method for preparing a tellurium-zinc-cadmium film material with adjustable forbidden bandwidth. By the method, a Cd1-xZnxTe composite film is grown by using a composite structure on the basis of radio frequency magnetron sputtering. Grains of Cd, Zn and Te are diffused into each other by adjusting the thickness of a deposited Zn film and performing quick annealing, so that the aim of increasing the content of Zn in the Cd1-xZnxTe film is fulfilled. The Cd1-xZnxTe film prepared by the method is high in uniformity, surface evenness and crystallinity, and has a compact structure, the degree of orientation of grains is high, components of the film are controllable, and a Cd1-xZnxTe film with large forbidden bandwidth, large area and high quality can be easily prepared.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and new energy sources, relates to thin-film solar cell materials, and specifically refers to a cadmium-zinc-telluride (Cd 1-x Zn x Te) the preparation method of film material. Background technique [0002] In 1993, Doty et al. grew high-quality Cd for the first time 1-x Zn x Te crystals. Due to Cd 1-x Zn x Te has been widely used due to its adjustable band gap, excellent mechanical strength, high resistivity, good photosensitive properties and charge transport properties. Part of the Cd in the sphalerite structure CdTe lattice is replaced by Zn to form a ternary compound Cd 1-x Zn x The addition of Te and Zn does not significantly affect the crystal structure of the material. CD 1-x Zn x Te can be viewed as a solid solution of two binary compounds ZnTe and CdTe, changing Cd 1-x Zn x The content of Zn in Te (x value or called composition), some important physical properties can ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 褚君浩曹鸿王善力江锦春邬云骅潘健亮张传军葛杰
Owner 上海太阳能电池研究与发展中心
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