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Silicon wafer cleaning process

A silicon wafer cleaning and process technology, applied in cleaning methods and utensils, cleaning methods using liquids, electrical components, etc., can solve the problems affecting the integrity of the gate oxide layer and the uneven thickness of the oxide layer.

Active Publication Date: 2012-06-06
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the gate oxide thins, surface micro-roughness can lead to non-uniform oxide thickness, affecting gate oxide integrity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] 100 double-sided polished wafers with a diameter of 300 mm, P, and a resistivity of 15 to 25 Ωcm produced by the Czochralski method were subjected to final single-sided polishing, and the silicon wafers after the final single-sided polished were divided into two groups (50 for each group). sheet) for cleaning, the cleaning process used is as follows:

[0012] The first group: APM→DHF→APM→HPM→IPA drying;

[0013] The second group: HF / H 2 o 2 →DI-water flushing→HF / H 2 o 2 →DI-water flushing→HF / H 2 o 2 → DI-water rinse → IPA drying (each step HF: H 2 o 2 :H 2 O=1:1:20, the cleaning time is 300 seconds).

[0014] Laser scanning results of silicon wafer surface particles:

[0015] (Particle size: ≥0.10 microns; unit: piece / piece)

[0016] maximum value

[0017] Silicon wafer surface metal contamination test results: (unit: E10atoms / cm 2 )

[0018] Na

[0019] From the above results, it can be seen that there is no significant difference i...

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PUM

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Abstract

The invention relates to a silicon wafer cleaning process. According to the invention, multiple cleaning steps are adopted in the silicon wafer cleaning process, and hydrofluoric acid and hydrogen peroxide which are chemical reagents are used in each step, wherein the volume ratio of HF to H2O2 to H2O is 1: 1: 20 - 1: 1: 300. The silicon wafer cleaning process has the advantages of effectively improving particle removing efficiency, reducing surface micro-roughness level and increasing the product percent of pass.

Description

technical field [0001] The present invention relates to an improved silicon wafer cleaning process, specifically adopting multi-step DHF / H 2 o 2 The solution cleans the silicon wafer. Through the cleaning process, the particle removal efficiency can be effectively improved, the micro-roughness level of the surface can be reduced, and the qualified rate of products can be improved. Background technique [0002] At present, most of the polished silicon wafers used in the manufacture of integrated circuits adopt processes such as crystal pulling, slicing, chamfering, grinding (including grinding and grinding), corrosion, polishing, and cleaning. Among them, cleaning is the last step in the whole process, so the quality of the cleaning effect will be directly reflected to the customer. [0003] At present, the cleaning methods widely used in the silicon wafer manufacturing process are the standard RCA cleaning method and the improved RCA cleaning method. The chemical reagents...

Claims

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Application Information

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IPC IPC(8): H01L21/02B08B3/08B08B3/12
Inventor 闫志瑞库黎明常青
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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