Plasma processing apparatus

Abstract

A plasma processing apparatus is disclosed, which includes: a cathode module comprising a plurality of first channels which generate plasma; an anode having a chamber which contains the cathode and having at least one plasma outlet corresponding to the first channels; an electrode connected to a high-frequency electrical power and the cathode; and a plurality of second channels penetrating through the anode; wherein each first channel and each second channel are disposed alternately. A first gas is introduced into the first channels ionized under high frequency electrical power. In the first channels, the free electrons collided brings high density of plasma. The generated plasma is expelled through the plasma outlet to form a plasma diffusion region. A second gas is introduced into the plasma diffusion region through the second channels to take part in the reaction of plasma.

Description

technical field [0001] The invention relates to a plasma processing device, in particular to a plasma processing device which has the characteristics of large area, high uniformity and high degree of dissociation, and can increase the film forming rate, which can not only reduce huge production costs , but also provide a better competitive advantage for its industry. Background technique [0002] Plasma-assisted chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) is to use the plasma to excite the gas to promote the reaction, and the electrons transfer their energy to the raw material molecules through inelastic collisions, forming a low-temperature plasma with a low degree of ionization but a high degree of activation. ; Since most of the raw material particles in the plasma state are in the excited state (excited state), it is equal to reducing the activation energy that the reaction needs to overcome, so the reaction that can be carried out at hig...

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Problems solved by technology

[0003] Parallel plate capacitive coupled plasma (CCP) uses the electric field generated by two parallel plates to accelerate electrons to obtain energy, and spreads around in the vacuum cavity, and collides with various particles during the diffusion process. The electrons with energy will undergo a free reaction after colliding with neutral gas molecules, and then generate more ions-electrons to maintain the plasma state; however, the electrons in the capacitively coupled plasma are accelerated from the cathode to the anode in a linear manner Acceleration, electrons can easily hit the positive electrode, causing energy loss and damage to the film formed on the substrate, and cannot increase the coating rate

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