Metalloporphyrin-thienothiadiazole organic semiconductor material and preparation method and application thereof
An organic semiconductor and metalloporphyrin technology, which is used in the manufacture of semiconductor/solid-state devices, semiconductor devices, light-emitting materials, etc., can solve the problems of limiting the application scope of organic semiconductor materials, no literature and patent reports, etc., and achieves good thermal stability and Environmental stability, improved carrier mobility, good film-forming effects
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[0040] The preparation method of metalloporphyrin-thienothiadiazole organic semiconductor material designed by the present invention, the steps are as follows:
[0041] Step S1. Dissolve 5,7-dibromothieno[3,4-c][1,2,5]thiadiazole (s) in the first organic solvent, and cool down to - with liquid nitrogen / isopropanol 78°C, then add n-butyllithium (n-BuLi) dropwise, and react at -78°C for 1-5 hours, then add 2-isopropoxy-4,4,5,5-tetramethyl-1, 3,2-dioxaborolane (x) or the structural formula is The bis-pinacolate diboron, continued to react at -78 ° C for 0.5-5 hours, then naturally warmed to room temperature, and reacted for 1-48 hours to obtain 5,7-bis(4,4,5,5-tetramethyl Base-1,3,2-dioxaborolane)ylthieno[3,4-c][1,2,5]thiadiazole (g); wherein, the first organic solvent is tetrahydrofuran , ether or at least one of dioxane; the molar ratio of 4,7-bis(tributyltin)-2,1,3-thienothiadiazole to tri-n-butyltin chloride is 1:1 ~10; the reaction formula is as follows:
[0042]
[...
Embodiment 1
[0058]This embodiment discloses a silicon fluorene zinc porphyrin-thienothiadiazole organic semiconductor material with the following structure
[0059]
[0060] In the above formula, n=40;
[0061] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0062] 1. 5,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) thieno[3,4-c][1,2,5] Synthesis of Thiadiazoles
[0063]
[0064] Under the protection of nitrogen, add p-5,7-dibromothieno[3,4-c][1,2,5]thiadiazole (8.8g, 0.03mol) into the three-necked flask, add 200ml of tetrahydrofuran solvent , slowly inject n-butyllithium (25.2mL, 2.5M, 0.06mol) with a syringe at -78°C, continue to stir the reaction for 2h, inject 2-isopropoxy-4 with a syringe at -78°C , 4,5,5-tetramethyl-1,3,2-dioxaborolane (13mL, 0.06mol), stirred overnight at room temperature. Saturated aqueous sodium chloride (30ml) was added to terminate the reaction, extracted with chloroform, dried over anhydrous sodium sulfat...
Embodiment 2
[0082] This embodiment discloses a silicon fluorene iron porphyrin-thienothiadiazole organic semiconductor material with the following structure
[0083]
[0084] In the above formula, n=56;
[0085] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0086] 1. 5,7-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) thieno[3,4-c][1,2,5] Synthesis of Thiadiazoles
[0087] Its preparation sees embodiment 1 for details.
[0088] 2. Synthesis of 5-(9'-methyl-9'-hexadecyl)silafluorene-15-(9'-docosyl)silafluorene porphyrin
[0089]
[0090] Set up an anhydrous and oxygen-free device, weigh the intermediates 2-aldehyde-9-methyl-9-hexadecylsilafluorene (0.45g, 1mmol), 2-aldehyde-9-docosylsilafluorene ( 0.66g, 1mmol), dipyrromethane (0.30g, 2mmol), dissolved in 250ml of dichloromethane, blown nitrogen for 30min, added 2ml of trifluoroacetic acid into the syringe, stirred at 100°C for 1h, then added dichlorodicyanobenzene Quinone (DDQ) (1.82...
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