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Preparation method of intermediate band material based on ultrafast laser doping

An ultrafast laser and intermediate belt technology, which can be used in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc. Integrated, low-cost effects

Inactive Publication Date: 2012-05-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0012] In view of this, the main purpose of the present invention is to provide a preparation method based on ultrafast laser doping intermediate band material, so as to realize titanium element doping beyond the Mott phase transition in silicon material, and solve the problem of high concentration of titanium element in silicon material. Difficult problems with concentration non-equilibrium doping

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  • Preparation method of intermediate band material based on ultrafast laser doping
  • Preparation method of intermediate band material based on ultrafast laser doping

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[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0026] The absorption of femtosecond and picosecond lasers by silicon substrates is nonlinear absorption. The penetration depth of laser energy is very shallow. Laser energy is deposited in a very thin layer on the surface of the material, making the temperature gradient between the surface melting layer and the substrate Larger, the speed of material solidification will be much greater than the speed of lattice recombination recovery, so femtosecond laser and picosecond laser are easy to generate supersaturated doped amorphous and polycrystalline phases on the surface of silicon materials. The absorption of nanosecond laser by silicon material belongs to linear absorption, its photon energy penetration is relatively deep,...

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Abstract

The invention discloses a preparation method of an intermediate band material based on ultrafast laser doping, which comprises the following steps: coating a titanium film on the surface layer of a silicon substrate by vaporization; and carrying out vaporization coating on the surface layer of the silicon material with the titanium film by ultrafast laser irradiation. By adopting a method of coating a titanium film on the silicon substrate by ultrafast laser irradiation, the doping concentration of titanium in the silicon material exceeds that of Mott transition titanium elements, and further the silicon-base intermediate band material is prepared, thereby solving the problem of high-concentration non-equilibrium titanium doping difficulty in the silicon material.

Description

technical field [0001] The present invention relates to the technical field of silicon intermediate zone material preparation, in particular to a method for preparing an intermediate zone material based on ultrafast laser doping, in particular to a method of using nanosecond, picosecond and femtosecond lasers to vapor-deposit a titanium film surface layer The silicon material is irradiated, and the silicon intermediate zone material preparation method is realized in the surface layer of the silicon material with a doping concentration exceeding the Mott phase transition titanium element. Background technique [0002] The position of the deep energy level in the forbidden band is relatively far away from the valence band and the conduction band, and the effect of narrowing the forbidden band of the material doped with high-concentration deep-level impurities is not significant, and the central wave functions of the high-concentration deep energy levels overlap each other. Car...

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Application Information

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IPC IPC(8): H01L21/268H01L31/18
CPCY02P70/50
Inventor 李辛毅韩培德毛雪胡少旭王帅范玉杰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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