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High-selectivity dry etching method for HfO2 thin film

A high-selectivity, dry etching technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inaccurate setting of the etching end point and low HfO2 selection, and achieve good etching effect, Improved accuracy, high selectivity effects

Inactive Publication Date: 2012-04-25
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Description
  • Claims
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Problems solved by technology

[0003] The invention discloses a high-selectivity dry etching method for HfO2 thin films, which is used to solve the problem in the prior art that the selection of high dielectric constant material HfO2 is relatively low and the setting of the etching end point is not accurate enough

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  • High-selectivity dry etching method for HfO2 thin film
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  • High-selectivity dry etching method for HfO2 thin film

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Embodiment Construction

[0019] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0020] A kind of highly selective dry etching method to HfO2 film, wherein,

[0021] Step a: In an etching device, the HfO2 film on the substrate is etched with a mixed gas composed of BCl3 gas and H-containing gas, wherein the BCl3 gas reacts with the HfO2 film to generate volatile by-products.

[0022] Further, the BCl3 gas reacts with the HfO2 film to generate a stable volatile product (BOCl) 3, and the highly selective dry etching of the high-k material HfO2 film is realized by using the BCl3 plasma.

[0023] The etching equipment described in the present invention can be selected from CCP, TCP, ICP or RIE equipment, and dry etching is carried out by gas mixed with BCl3 plasma fonts in the above equipment.

[0024] During the etching process of step a and step b, the etching temperature can be controlled between 150°C and 300°C, that ...

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Abstract

The invention discloses a high-selectivity dry etching method for an HfO2 thin film, wherein the method comprises the following steps: step a: carrying out main etching on the HfO2 thin film on a substrate by using mixed gas of BCl3 and gas containing H element in an etching device; and step b: carrying out over-etching on the substrate by using the mixed gas of BCl3 gas and O2 gas in the etching device. According to the invention, through the high-selectivity dry etching method for the HfO2 thin film, the problem in the prior art that the etching terminal point design is not accurate enough caused by the relatively low selection ratio for high K material HfO2 is solved; the BCl3 gas is used to carry out dry etching on the HfO2 thin film, the etching effect is very good; and the BC13 gas has higher selection ratio for the silicon substrate, and the profile of an etching device and the etching speed ratio are easy to control, thus the accuracy of an etching terminal point is improved.

Description

technical field [0001] The invention relates to an etching method, in particular to a highly selective dry etching method for HfO2 thin films. Background technique [0002] The existing patent (application number: 200480014635.1, method and system for etching high-k dielectric materials) uses halogen gas combined with other reducing gases to etch high-k value materials, but the gas itself has various limitations : The etching of high-k dielectric materials by fluorine-containing plasma is mainly due to the bombardment sputtering effect, and it is difficult to generate volatile products, so it is impossible to etch the substrate with high selectivity; although chlorine gas can theoretically be combined with high-k Dielectric materials form volatile products, but since their ion energy is low enough to break the Hf-O bond, selective etching of Si or SiO2 substrates is difficult to achieve, especially in this case, leading to the application of existing technologies The sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 杨渝书陈玉文邱慈云
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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