High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method

Abstract

The invention discloses a high-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and a manufacturing method. The device comprises a substrate (1) and an epitaxial layer grown on the substrate (1), and is characterized in that: the epitaxial layer comprises a stress buffer layer (2), a GaN layer (3) and a heterostructure barrier layer (4) sequentially upwards from the bottom; the heterostructure barrier layer (4) is etched to the GaN layer (4) to form a groove in a gate region; a p-type GaN layer (6) is selectively grown on the groove; an insulated dielectric layer (7) is deposited on the surfaces of the p-type GaN layer (6) and the heterostructure barrier layer (4) and etched in source and drain regions on the surface of the heterostructure barrier layer (4); a gate metal (9) is evaporated in the gate region; and an ohmic contact metal (8) is evaporated on the source and drain regions. The device provided by the invention has a simple structure, is simple in manufacturing process and high in stability, and can effectively increase a forward threshold voltage and simultaneously repair crystal lattices damaged by plasma treatment.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a GaN high threshold voltage enhanced MOSFET device and a preparation method. Background technique [0002] Semiconductor power switching devices are necessary functional components in the process of power transmission and control. However, power switching devices made of third-generation semiconductor materials represented by GaN have wide bandgap, high breakdown electric field strength, high thermal conductivity, high saturation electron drift velocity, and high concentration of two-dimensional electron gas at the heterojunction interface. Excellent material properties have become a hot spot in the research of semiconductor power switching devices. Compared with traditional Si-based power devices, GaN-based power switching devices have the advantages of fast switching speed, low loss, and high heat resistance, and are ideal substitutes for next-generation energy-saving pow...

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Problems solved by technology

[0008] The purpose of the present invention is to overcome the disadvantages of low threshold voltage and lattice damage caused by plasma etching of ordinary hybrid MOSHFET devices, and provide a GaN-based enhanced MOSHFET device and its preparation method

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