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Composition for filling discharge gap and electrostatic discharge protection member

A discharge gap, electrostatic discharge technology, applied in the direction of protection against damage caused by electrostatic discharge, overvoltage protection resistors, emergency protection circuit devices for limiting overcurrent/overvoltage, etc., can solve instability, unavoidable manufacturing process, the complexity of the manufacturing process of forming components, etc., to achieve the effect of excellent adjustment accuracy and low cost

Inactive Publication Date: 2012-02-01
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, multilayer chip varistors that are sintered bodies have the following problems: complex manufacturing processes including chip molding, internal electrode printing, chip lamination, etc. Defective conditions such as peeling
For this element, although it is described that the discharge voltage can be set to less than 1KV, there is a manufacturing process for forming the element due to instability caused by deformation of the discharge inducer when the surge current flows, and the need to provide air holes. process has issues such as complexity

Method used

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  • Composition for filling discharge gap and electrostatic discharge protection member
  • Composition for filling discharge gap and electrostatic discharge protection member
  • Composition for filling discharge gap and electrostatic discharge protection member

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0126] To 50.0 g of the polysiloxane compound obtained in the synthesis example, 25 g of the product name "08-0076" (manufactured by Toyo Almi Co., Ltd. with an average particle diameter of aluminum powder of 2.5 μm) was added as the metal particles (A) having an oxide film as a layer. 2.5 g of the product name of the substance (B) "Lu-Center-It-SPN" (manufactured by Cooper Chemical Co., Ltd., smectite family scale-like average particle size 2um) was stirred with a homogenizer at 2000 rpm for 15 minutes, and dissolved in the solid content Calculating the volume occupancy of , the composition for filling a discharge gap was obtained in which the metal particles (A) having an oxide film were 43% by volume and the layered substance (B) was 4% by volume. Using this composition for discharge gaps, an electrostatic discharge protector was obtained by the method described above, and the resistance, operating voltage, and high voltage resistance at normal times were evaluated. The res...

Embodiment 2

[0128] To 25.0 g of the polysiloxane compound obtained in the synthesis example, 60 g of the product name "08-0076" (manufactured by Toyo Almi Co., Ltd. with an average particle diameter of aluminum powder of 2.5 μm) was added as a metal particle (A) having an oxide film as a layer. 4.0 g of the product name "UF-G5" (manufactured by Showa Denko Co., Ltd., artificial graphite fine powder flake-like average particle size 3 μm) (B) was stirred at 2000 rpm for 15 minutes using a homogenizer. Then, 11 g each of "X14-B3445A agent" and "X14-B3445B agent" (both silicone resins manufactured by Momentive, Puff, Mans, Materials, Japan Co., Ltd.) were added as a polysiloxane compound, and homogenized The machine was stirred at 2000rpm for 10 minutes, and the composition for filling the discharge gap was obtained in which the metal particles (A) having an oxide film (A) were 44% by volume and the layered substance (B) was 5% by volume based on the volume occupancy rate in the solid content....

Embodiment 3

[0130] To 15.0 g of the polysiloxane compound obtained in the synthesis example, 70 g of the product name "08-0076" (manufactured by Toyo Almi Co., Ltd. with an average particle diameter of aluminum powder of 2.5 μm) was added as a metal particle (A) having an oxide film as a layer. 0.1 g of the product name "VGCF" (registered trademark) of the substance (B) (vapour-deposited carbon fiber average fiber diameter 0.15 μm, average fiber length 10 μm, manufactured by Showa Denko Co., Ltd.) was stirred at 2000 rpm for 15 minutes with a homogenizer. Then, 15 g each of "X14-B3445A agent" and "X14-B3445B agent" (both silicone resins manufactured by Momentive, Puff, Mans, Materials, Japan Co., Ltd.) were added as a polysiloxane compound, and homogenized The machine was stirred at 2000rpm for 10 minutes, and the composition for filling the discharge gap was obtained in which the metal particles (A) with an oxide film were 46% by volume and the layered substance (B) was 0.1% by volume bas...

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PUM

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Abstract

Disclosed is an electrostatic discharge protection member which can be formed in an arbitrary shape and conveniently used for solving ESD problems in electronic circuit boards of various designs, shows excellent properties of highly accurately controlling working voltage, and enables downsizing and cost reduction. Also disclosed is a composition for filling a discharge gap which can be used in producing the aforesaid electrostatic discharge protection member. A composition for filling a discharge gap characterized by comprising a metal grain having an oxide coating (A), a stratiform substance (B) and a binder component (C); and an electrostatic discharge protection member which comprises the composition.

Description

technical field [0001] The present invention relates to a composition for filling a discharge gap and an electrostatic discharge protector, and more specifically, to an electrostatic discharge protector that is excellent in adjustment accuracy of operating voltage, can be miniaturized, and can be reduced in cost, and its use in the electrostatic discharge protector A discharge gap filling composition. Background technique [0002] Electrostatic discharge (hereinafter sometimes referred to as ESD) is one of the destructive and unavoidable phenomena to which electrical systems and integrated circuits are subjected. From an electrical point of view, ESD is an instantaneous high current phenomenon that has a peak current of several amperes and lasts for 10 to 300 nanoseconds. Therefore, when ESD occurs, if a current of several amperes is not conducted out of the integrated circuit within tens of nanoseconds, the integrated circuit will suffer damage that is extremely difficult ...

Claims

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Application Information

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IPC IPC(8): H01T4/10H02H9/06H05F3/02
CPCH01C7/1006H01C7/12H01T4/10H05K9/0067H01C17/06553H01C17/06526H01T4/02H02H9/06H05F3/02
Inventor 大西美奈石原吉满井浩文东幸彦
Owner SHOWA DENKO KK
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