Ultra-medium UHF band-pass filter
A technology of ultra-high frequency band and supernormal medium, which is applied in the direction of waveguide devices, electrical components, circuits, etc., can solve the problems of large size, large loss, and difficult filter, etc., and achieve low insertion loss, low production cost, and easy Processing effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0009] Specific implementation mode one: combine figure 1 Describe this embodiment. This embodiment includes multiple split resonant rings 1, metal strips 2, No. 1 capacitor 3-1, No. 2 capacitor 3-2, substrate 4, air slot 5, No. 1 signal line 6-1, No. 2 capacitor No. signal wire 6-2, No. 1 ground wire 7-1 and No. 2 ground wire 7-2 have a rectangular parallelepiped air slot 5 upward at the midline position of the lower surface of the base 4, and the metal strip 2 is bonded to the top of the air slot. In the middle, the split resonant ring 1 is composed of an inner ring and an outer ring of the same material. The opening directions of the inner ring and the outer ring are opposite and in the same plane. A plurality of split resonant rings 1 are arranged side by side in a row, non-contact placed on the metal On the upper surface of the substrate 4 directly above the bar 2, the outer ring openings of all the multiple split resonant rings 1 are turned to the right, and the inner ri...
specific Embodiment approach 2
[0011] Specific implementation mode two: combination figure 1 This embodiment is described. The difference between this embodiment and Embodiment 1 is that the total area of the ultra-high frequency bandpass filter of the meta-media is 15.5mm×9mm. Other components and connections are the same as those in Embodiment 1.
specific Embodiment approach 3
[0012] Specific implementation mode three: combination image 3 This embodiment is described. The difference between this embodiment and Embodiment 1 is that the substrate 4 is made of silicon with a relative permittivity of 11.9, and a thickness of 1 mm. Other components and connections are the same as those in Embodiment 1.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com