Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for encapsulating an optoelectronic device

A technology of optoelectronic devices and packaging methods, which is applied in the field of optoelectronics, can solve the problems of black spots, decreased stability, and decreased device performance, and achieve the effects of prolonging device life, good curing agent properties, and improving device stability

Inactive Publication Date: 2011-12-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Oxygen oxidizes organic materials to generate carbonyl compounds, which are serious quenchers. In addition, black spots will be formed when materials deteriorate, accompanied by device performance degradation
The influence of water vapor is more obvious, and its main damage method is the hydrolysis of the organic layer compound by the conductive electrode, which greatly reduces the stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for encapsulating an optoelectronic device
  • A method for encapsulating an optoelectronic device
  • A method for encapsulating an optoelectronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(tri-N-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic thin film Packaging material layer 21 is Al 2 o 3 , UV-curable resin 22 includes 75% epoxidized octadecanoconjugated triene-9,11,13-acid triglyceride, 15% reaction diluent and 10% triaryl sulfur type hexafluorophosphonium salt , the number of cycles n is 20, and the device structure is:

[0033] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 20

[0034] The preparation method is as follows:

[0035] ①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the substrate and dry it with nitrogen;

[0036] ②Transfer the clean substrate to the high vacuu...

Embodiment 2

[0043] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(tri-N-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic thin film Packaging material layer 21 is Al 2 o 3 , UV-curable resin 22 includes 82% epoxidized octadecanoconjugated triene-9,11,13-acid triglyceride, 10% reactive diluent and 8% triarylsulfur-type hexafluorophosphorus salt , the number of cycles n is 16, and the device structure is:

[0044] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 16

[0045] The preparation method is similar to Example 1.

Embodiment 3

[0047] Such as figure 1 As shown, 1 is an organic electroluminescent device, the anode layer 12 is ITO, and the hole transport layer 13 is N, N'-bis(naphthylidene-1-yl)-N,N'-bis(phenyl) - benzidine (NPB), electron transport layer 14 is 1,3,5-(tri-N-phenyl-2-benzimidazole-2) benzene 41 (TPBi), cathode layer 15 is Mg:Ag alloy, inorganic thin film Packaging material layer 21 is Al 2 o 3 , UV-curable resin 22 includes 90% epoxidized octadecanoconjugated triene-9,11,13-acid triglyceride, 5% reactive diluent and 5% triarylsulfur-type hexafluorophosphorus salt , the number of cycles n is 12, and the device structure is:

[0048] Glass substrate / ITO / NPB(50nm) / TPBi(30nm) / Mg:Ag(200nm) / [Al 2 o 3 (200nm) / UV curable resin (100nm)] 12

[0049] The preparation method is similar to Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for encapsulating an optoelectronic device. The prepared device is encapsulated by a thin film encapsulation method. The optoelectronic device is covered by a thin film encapsulation layer, and the thin film encapsulation layer consists of thin layers of inorganic thin film encapsulation material and thin layers of ultraviolet curable resin alternately. Overlapping composition, the ultraviolet curable resin includes the following components: epoxidized octadecyl-conjugated triene-9,11,13-acid triglyceride, reaction diluent and triarylsulfur hexafluoroantimony salt. The encapsulation method can effectively block oxygen and water in the surrounding environment, which is beneficial to improving the stability of the device and prolonging the service life of the device; at the same time, the encapsulation method has the characteristics of simple preparation process and low cost.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a packaging method for an optoelectronic device. Background technique [0002] Optoelectronics technology is a rapidly developing industry with high technological content after microelectronics technology. With the rapid development of optoelectronic technology, optoelectronic products such as light-emitting diodes, organic light-emitting diodes, solar cells, and thin-film transistors have gradually matured, and they have greatly improved people's lives. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market, and the competition in the field of optoelectronic information is unfolding worldwide. [0003] Current optoelectronic devices, including organic electroluminescent devices, inorganic light emitting diodes, organic solar cells, inorganic solar cells, organic thin film tr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/29H01L51/00C08G59/00
Inventor 于军胜臧月陈珉蒋亚东
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com