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Process for producing Czochralski silicon single crystal

A production process, Czochralski silicon technology, applied in single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of poor slag extraction effect, difficult to grasp the time of slag removal, low purity of silicon single crystal, etc., to achieve easy control , Reduce the probability of silicon leakage accidents, and the effect of simple processing steps

Inactive Publication Date: 2011-11-16
XIAN HUAJING ELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a production process for Czochralski silicon single crystal, which is reasonable in design, simple in method steps, convenient in implementation and easy to master, good in use effect, and can effectively guarantee The quality of the silicon single crystal produced can solve practical problems such as difficulty in grasping the slag removal time, poor slag extraction effect, and low purity of the produced silicon single crystal in the existing silicon single crystal production process.

Method used

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  • Process for producing Czochralski silicon single crystal
  • Process for producing Czochralski silicon single crystal

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Embodiment Construction

[0043] like figure 1 A production process for a Czochralski silicon single crystal shown, comprising the following steps:

[0044] Step 1. Preparation of silicon raw material and dopant: According to the conventional preparation method of silicon raw material for single crystal furnace, the silicon raw material for growing Czochralski single crystal silicon is prepared, and according to the conventional cleaning treatment method of silicon raw material for single crystal furnace, Clean the prepared silicon raw material; at the same time, according to the type and resistivity of the silicon single crystal to be produced, determine the type and doping amount of the dopant to be added, and determine the dopant used for growing Czochralski single crystal silicon Get ready.

[0045] In this embodiment, the same as the conventional method of preparing silicon raw materials for growing Czochralski silicon single crystals, first determine the silicon single crystal production accordi...

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Abstract

The invention discloses a process for producing a Czochralski silicon single crystal, which comprises the following steps of: 1, preparing a silicon raw material and a doping agent; 2, charging; 3, vacuumizing; 4, melting; 5, extracting slag, namely 501, performing cooling crystallization, 502, gradually heating, and keeping the crystallization process continuously performed until insoluble substances floating on the surface of a silicon melt are completely condensed by the crystal, and 503, taking the crystal out, and removing the slag; and 6, performing subsequent treatment, namely finishing crystal leading, shoulder expanding, shoulder rotating, diameter equalizing, ending and blowing down processes in turn by using a single crystal furnace according to the conventional treatment process of a Czochralski method to obtain the finished silicon single crystal formed by pulling. The process is reasonable in design, simple in steps, convenient to implement, easy to master and good in using effect, can effectively ensure the quality of the produced silicon single crystal, and can solve the practical problems that slag removing time is difficult to master, the slag extracting effect is poor, the produced silicon single crystal has low purity, and the like.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal production, and in particular relates to a production process of Czochralski silicon single crystal. Background technique [0002] Single crystal silicon, also known as silicon single crystal, is a semiconductor material. In recent years, with the rapid development of the photovoltaic industry, monocrystalline silicon has been used to make solar cells, showing a situation in which demand exceeds supply. With the development of high technology, it is the common wish of every material manufacturer and device manufacturer to produce nearly perfect high-quality single crystal silicon. This kind of single crystal silicon has good cross-sectional resistivity uniformity, high life, and low carbon content. , Micro-defect density is small, and the oxygen content can be controlled. [0003] At present, the methods for producing single crystal silicon include Czochralski method, zone melting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH
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