Nonvolatile charge capture type storage device, preparation method thereof and application

Abstract

The invention relates to a non-volatile charge trapping memory device, its preparation method and application. The preparation method is simple to operate and easy to control, and the nanocrystals used as storage media in the obtained memory device are evenly distributed. The preparation method of the non-volatile charge trapping memory device includes the following steps: a) forming a tunneling layer on the surface of the substrate; b) forming a uniform composition of (ZrO2)x(M)1-x on the tunneling layer The thin film serves as a storage layer, where 1>x>O.5, and M is SiO2 or Al2O3; c) form a barrier layer on the storage layer; d) anneal the sample prepared above to make ZrO2 nanocrystals from the storage layer Precipitated as a storage medium. The present invention uses high-temperature annealing treatment to precipitate ZrO2 nanocrystals from the mother phase of the storage layer, thereby achieving the effect of nanocrystal storage. The nanocrystals used as storage media obtained by this method are evenly distributed in the amorphous mother phase.

Description

technical field [0001] The invention relates to a nonvolatile charge trapping memory device, its preparation method and application. Background technique [0002] For decades, the development of integrated circuits has basically followed the Moore's Law predicted by Dr. Gordon E. Moore, one of the founders of Intel Corporation, in 1964: 12 to 18 months doubles, feature size shrinks times. As the feature size of devices becomes smaller and smaller, traditional floating-gate non-volatile semiconductor memory devices face serious leakage problems. The size of the tunneling layer in the floating gate memory device is continuously reduced, so that a single defect will cause all the charges stored in the polysilicon floating gate to be lost. To solve this difficult problem, polysilicon-oxide-nitride-oxide-silicon (SONOS) type semiconductor memory devices have been extensively studied. In such devices, electrons are captured by the Si 3 N 4 A discrete trap capture in the sto...

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Problems solved by technology

However, many researchers spend most of their energy on the preparation of metal nanocrystals and semiconductor nanocrystals for storage devices, and there is less research on other forms of nanocrystals

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