Resistance-type random storage component and preparation method thereof
A resistive random storage element technology, applied in electrical components, electric solid state devices, circuits, etc., to achieve the effects of excellent high-low resistance state transition characteristics, excellent performance, excellent memory retention characteristics and continuous cycle read and write capabilities
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Embodiment 1
[0027] Example 1 Preparation of NiFe by Chemical Solution Deposition 2 o 4 RRAM
[0028] 1. NiFe 2 o 4 Precursor preparation: NiFe 2 o 4 The solvent of precursor solution is the mixed solution of 32ml ethylene glycol methyl ether and 16ml glacial acetic acid, and solute is 8.2030g ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O) and 2.5392g nickel acetate tetrahydrate (C 4 h 6 NiO 4 4H 2 O), stirred at room temperature for 6 hours until completely dissolved, that is, 50ml of 0.2mol / L NiFe 2 o 4 Precursor.
[0029] 2. NiFe 2 o 4 Precursor film preparation: NiFe 2 o 4 The precursor solution is spin-coated on the Pt substrate, the spin-coating parameters are adjusted to 3000rpm, the pretreatment temperature of each spin-coating is 300°C, and the number of spin-coating is 8 times, that is, NiFe 2 o 4 precursor film.
[0030] 3. NiFe 2 o 4 Precursor film heat treatment: the prepared NiFe 2 o 4 The precursor film is heat-treated at 700°C for 1 hour to complete...
Embodiment 2
[0033] Example 2 Preparation of NiFe by chemical solution deposition 2 o 4 RRAM
[0034] 1. NiFe 2 o 4 Precursor preparation: NiFe 2 o 4 The solvent of precursor solution is the mixed solution of 32ml ethylene glycol methyl ether and 16ml glacial acetic acid, and solute is 8.2030g ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O) and 2.5392g nickel acetate tetrahydrate (C 4 h 6 NiO 4 4H 2 O), stirred at room temperature for 6 hours until completely dissolved, that is, 50ml of 0.2mol / L NiFe 2 o 4 Precursor.
[0035] 2. NiFe 2 o 4 Precursor film preparation: NiFe2 o 4 The precursor solution is spin-coated on the Pt substrate, the spin-coating parameters are adjusted to 3000rpm, the pretreatment temperature of each spin-coating is 300°C, and the number of spin-coating is 4 times, that is, NiFe 2 o 4 precursor film.
[0036] 3. NiFe 2 o 4 Precursor film heat treatment: the prepared NiFe 2 o 4 The precursor film is heat-treated at 400°C for 1 hour to complete t...
Embodiment 3
[0039] Example 3 Preparation of NiFe by pulsed laser deposition 2 o 4 RRAM
[0040] 1. NiFe 2 o 4 Film preparation, choose NiFe 2 o 4 Ceramic target, NiFe prepared on conductive substrate Pt by pulsed laser deposition 2 o 4 film. Laser energy is 300 mJ / cm 2 , the frequency is 5Hz, the air pressure is 50 Pa, the temperature is 500°C, and the deposition time is 1 hour, that is, NiFe 2 o 4 thin film with a thickness of 300nm.
[0041] 2. Preparation of NiFe 2 o 4 Thin film sandwich structure: using vacuum coating and mask technology, in NiFe 2 o 4 Cu electrodes are plated on the surface of the film to prepare Cu / NiFe 2 o 4 / Pt resistive random access memory element.
[0042] 3. Test Cu / NiFe with Keithley 236 Analyzer 2 o 4 The current-voltage characteristics, cycle characteristics and retention characteristics of / Pt resistive random access memory elements. Prepared NiFe 2 o 4 Thin film storage elements and the current-voltage characteristics, cycle characte...
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