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Kyropoulos method for quickly growing large-size sapphire single crystal

A growth method, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of long growth cycle, low crystal yield, limited popularization and application, etc., and achieve short growth cycle and large growth crystal size , the effect of broad application prospects

Active Publication Date: 2011-08-03
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The Kyropoulos method has been proven by many foreign companies to be the most suitable method for growing large-sized sapphire single crystals for industrial production. However, due to the long growth period of the traditional Kyropoulos method, the growth period of a crystal weighing 31 kg is about 12 days. The 85 kg crystal growth cycle is more than 15 days, and the crystal yield is low, generally only about 65%, which greatly limits the further application of this method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment one: the specific technological process of this embodiment is as follows:

[0028] (1) Furnace loading: put 31 kg of high-purity alumina raw material (purity >99.997%) into the crucible of the single crystal furnace, and accurately orientate the A-direction (or C-direction, M-direction, R-direction) with a diameter of 12mm The seed crystal is installed on the seed crystal clip first, the seed crystal orientation accuracy is ±0.1o, and then the seed crystal clip is installed on the seed crystal rod, the single crystal furnace cover is closed, the cooling water circulation system is started, the cooling water flow is adjusted, and the outlet water temperature is controlled at Within the range of 27±1℃;

[0029] (2) Vacuuming: Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa.

[0030] (3) Heating material: Start the heating system, adjust the heating voltage, and heat at a heating rate of 400°C / h. When the temperature reaches 2150°C, ...

Embodiment 2

[0039] Embodiment two: the specific technological process of this embodiment is as follows:

[0040] (1) Furnace loading: put 85 kg of high-purity alumina raw material (purity >99.997%) into the crucible of the single crystal furnace, and accurately orientate the A-direction (or C-direction, M-direction, R-direction) with a diameter of 18mm The seed crystal is installed on the seed crystal clip first, the seed crystal orientation accuracy is ±0.1o, and then the seed crystal clip is installed on the seed crystal rod, the single crystal furnace cover is closed, the cooling water circulation system is started, the cooling water flow is adjusted, and the outlet water temperature is controlled at Within the range of 27±1℃;

[0041] (2) Vacuuming: Start the vacuum system to make the pressure in the furnace reach 10 -3 Pa.

[0042] (3) Heating material: Start the heating system, adjust the heating voltage, and heat at a heating rate of 200°C / h. When the temperature reaches 2150°C, ...

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Abstract

The invention provides a Kyropoulos method for quickly growing a large-size sapphire single crystal. Processes of charging, vacuumizing, heating for melting, auxiliary temperature field adjustment, crystal leading, shoulder extending, shoulder contracting, equal-diameter growth, pull-off, cooling annealing and discharging are finished in a growth furnace of the large-size sapphire single crystal. The Kyropoulos method for quickly growing the large-size sapphire single crystal is greatly improved on the basis of the conventional Kyropoulos method, and has the advantages of shorter growth period, larger size and higher quality of the grown crystal, higher yield of the crystal, lower unit production cost and the like.

Description

[0001] (1) Technical field [0002] The invention relates to a method for preparing a sapphire single crystal, in particular to a method for rapidly growing a large-sized sapphire single crystal weighing more than 31kg. (2) Background technology [0003] Sapphire single crystal has excellent optical, mechanical, chemical and electrical properties. It has high optical transmittance from 0.190 μm to 5.5 μm, high strength, erosion resistance, corrosion resistance and high temperature resistance. Therefore, it is widely used as a window material for various optical components and infrared military devices, space vehicles, and high-intensity lasers. Sapphire has high hardness and good wear resistance, and can manufacture bearings or wear-resistant components of various precision instruments, clocks and other precision machinery. In addition, sapphire is the semiconductor substrate material with the best comprehensive performance so far. With the increasing expansion of the white...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B29/20
Inventor 左洪波杨鑫宏
Owner HARBIN AURORA OPTOELECTRONICS TECH
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