Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof

A technology of transparent conductive film and powder, applied in coating, metal material coating process, vacuum evaporation coating and other directions, can solve the problems of difficult to control thickness, difficult to obtain, poor light transmittance, etc. The effect of low temperature and high stability

Inactive Publication Date: 2011-07-27
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to obtain SZO thin films with low resistivity when prepared at low temperature without heat treatment.
[0004] The ultra-thin conductive metal layer can also be used as a transparent conductive film, but its thickness is difficult to control, the light transmittance is poor, and it is easy to react with the external environment, which limits its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof
  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof
  • Preparation method of multilayer transparent conductive thin film as well as prepared thin film and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] see figure 1 , showing a method for preparing a multilayer transparent conductive film according to an embodiment of the present invention, which includes the following steps:

[0018] S01: SiO 2 Powder and ZnO powder are mixed and sintered as SZO target material, the SiO 2 The mass ratio of the powder to the ZnO powder is 2 / 199-1 / 6;

[0019] S02: Provide Ag targets;

[0020] S03: Put the SZO target and the Ag target into the magnetron sputtering chamber, sputter the first SZO layer, the Ag layer and the second SZO layer on the substrate in sequence to obtain the SZO-Ag with a sandwich structure -SZO transparent conductive film.

[0021] In step S01, the SiO 2 Mix the powder and ZnO powder evenly, and sinter, for example, at a temperature of 900° C. to 1350° C. to obtain an SZO ceramic target. Preferably, SiO 2 The mass ratio of powder to ZnO powder is 1 / 70~1 / 20, more preferably, SiO 2 The mass ratio of the powder to the ZnO powder is 1 / 50˜1 / 30. In a preferred ...

Embodiment 1

[0029] Choose SiO2 2 :ZnO=1:49 (mass ratio) powder, after being evenly mixed, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put it into a vacuum chamber together with an Ag target (Φ50×3mm). Then, the PET substrate was ultrasonically cleaned with absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the first SZO layer was 20W, the sputtering power of the Ag target was 60W, and the sputtering power of the second SZO layer was 100W. The thickness of the three layers of the obtained SZO-Ag-SZO thin film is 60nm, 15nm, 60nm respectively, the sheet resistance is 8Ω / □, and the average transmittance of visible light is 90%.

Embodiment 2

[0031] Choose SiO2 2:ZnO=1:49 (mass ratio) powder, after being evenly mixed, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put it into a vacuum chamber together with an Ag target (Φ50×3mm). Then, the PET substrate was ultrasonically cleaned with absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the first SZO layer was 20W, the sputtering power of the Ag target was 60W, and the sputtering power of the second SZO layer was 100W. The thickness of the three layers of the obtained SZO-Ag-SZO thin film is 75nm, 5nm, 75nm respectively, the sheet resistance is 450Ω / □, and the average transmittance of visible light is 93%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of preparing semiconductor materials and provides a preparation method of a multilayer transparent conductive thin film as well as a prepared thin film and an application thereof. The method comprises the following steps: mixing SiO2 powder with ZnO powder and sintering to serve as an SZO target, wherein the mass ratio of the SiO2 powder to the ZnO powder is 2 / 199-1 / 6; providing an Ag target; and putting the SZO target and the Ag target into a magnetic-control sputtering cavity, orderly sputtering a first SZO layer, an Ag layer and a second SZO layer on a substrate so as to obtain an SZO-Ag-SZO transparent conductive thin film which is of a sandwich structure. The invention also provides the multilayer transparent conductive thin film obtained by using the method and the application of the film in semiconductor photoelectric devices.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a multilayer transparent conductive film, the prepared film and its application. Background technique [0002] Transparent conductive film is a photoelectric material that combines optical transparency and conductivity. Due to its excellent photoelectric properties, it has become a research hotspot and a frontier topic in recent years. It can be widely used in solar cells, LEDs, TFTs, LCDs and touch screens Wait for the screen to display the field. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive photoelectric properties, indium is toxic, expensive, poor in stability, and easy to be reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost It is an ITO replacement material with excellent performance. Among them, zinc oxide ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/34
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com