Positive electrode of silicon solar cell designed according to topology principle

Abstract

The invention relates to the field of the design of positive electrodes of silicon solar cells, in particular to a positive electrode of a silicon solar cell designed according to the topology principle. The positive electrode comprises fine grid lines and main grid lines, wherein a plurality of fine grid lines on the front side of a cell film are in concentric circles and concentric circular arcs; and the distance between the adjacent fine grid lines is 2-3mm. In the grid line conduction structure of the silicon solar cell, which is designed by the invention, the topology rule is applied, and thus the distribution condition of the grid line conduction structure is changed, the transmission speed of electrons on the surface of the cell film is improved and the effective conduction of the electrons is improved.

Description

Technical field [0001] The present invention relates to the field of silicon solar cell positive electrode design, in particular to a silicon solar cell positive electrode designed based on topological principles. Background technique [0002] At present, the industrialization technology of crystalline silicon solar cells is very mature. However, compared with conventional energy sources, relatively high cost and low efficiency restrict its development. A lot of research has been conducted on how to reduce costs and improve conversion efficiency. [0003] Among the factors affecting efficiency, the gate line is one of the key factors. The grid lines on the silicon solar surface are designed to maximize the collection of photocurrent and reduce the series resistance as much as possible. This means that the grid lines should be denser and thicker as possible, but this will inevitably reduce the light-receiving area of ​​the silicon cell. Therefore, the design of the grid line should...

AI Technical Summary

Problems solved by technology

Although this design reduces the light-receiving area of ​​the silicon cell, it increases the series resistance of the cell, which has a great impact on the conversion efficiency of the silicon cell.

Although the series resistance can be reduced by making the gate line very high and narrow cross-sectional area, this increases the amount of paste used and increases the manufacturing cost

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