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SCR (silicon controlled rectifier)-based electrostatic protection device of integrated circuit

An integrated circuit, electrostatic protection technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problem of low maintenance voltage of electrostatic protection devices, improve the maintenance voltage and anti-latch effect ability, improve the protection ability, protect powerful effect

Active Publication Date: 2011-06-29
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention proposes an electrostatic protection structure for SCR maintaining voltage, which is mainly used for electrostatic discharge protection of semiconductor high-voltage process technology, solves the problem of low maintaining voltage of electrostatic protection devices of integrated circuits, and integrated circuits are not easy to fail due to latch-up effect

Method used

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  • SCR (silicon controlled rectifier)-based electrostatic protection device of integrated circuit
  • SCR (silicon controlled rectifier)-based electrostatic protection device of integrated circuit
  • SCR (silicon controlled rectifier)-based electrostatic protection device of integrated circuit

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Embodiment Construction

[0032] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0033] The biggest difference between the present invention and other similar protection structures is that an N implantation is performed below the anode end of the SCR, and the N implantation region formed plays an important role in the ESD performance of the SCR in the device, and the implantation conditions can be adjusted. Adjust according to the needs of the specific part to be protected.

[0034] As an embodiment of the specific structure of the electrostatic discharge (ESD) device of the present invention, as image 3 Shown is a structure of SCR-LDMOS.

[0035] Among them, 1, 2, 3, 4, 5, 6, 7, 8, and 9 form a SCR-LDMOS structure. N+ implantation region 2, FOX 3, POLY 4, N+ implantation region 9, they together form the basic structure of LDMOS. The four parts of P+ implantation region 1, P well 5, N well 7, and N+ implantation region 9 togethe...

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Abstract

The invention provides a silicon controlled rectifier (SCR)-based electrostatic protection device of an integrated circuit, which can improve the maintaining voltage, wherein an electrostatic discharge protection structure of a high-voltage device improves the structure of a traditional high-voltage protection device, an N injection region is increased below the anode end of the original SCR, and the electron concentration at the lower part of an anode of the SCR is improved. By adopting the device, the problem of low maintaining voltage of the traditional electrostatic protection device of the integrated circuit can be solved; by adjusting the injection dose, the ESD (electrostatic discharge) voltage of the original device can be reduced, and the maintaining voltage can be improved; furthermore, the electrostatic discharge protection capability and the capability of resisting the latch-up effect of the integrated circuit can be upgraded.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to an electrostatic protection device for an integrated circuit based on a silicon controlled rectifier (SCR). Background technique [0002] The electrostatic discharge protection device involved in the present invention is to prevent damage or failure of the internal circuit of the semiconductor due to electrostatic discharge (ESD) surge or stress. [0003] Electrostatic discharge is a natural phenomenon that is ubiquitous in our lives. However, the large current generated in a short period of time during electrostatic discharge will cause fatal damage to the integrated circuit, which is an important problem causing failure in the production and application of integrated circuits. For example, for the electrostatic discharge phenomenon (HBM) that occurs on the human body, it usually occurs in hundreds of nanoseconds, and the maximum current peak may reach several amperes; whil...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L29/1016H01L29/749H01L27/0262H01L27/0623H01L29/0619H01L27/0817H01L29/87H01L29/402H01L29/8611
Inventor 代萌林中瑀
Owner CSMC TECH FAB2 CO LTD
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