Infrared sensing combined ambient light source sensor and manufacturing method thereof

A manufacturing method, infrared technology, applied in the manufacture of semiconductor/solid-state devices, using electric radiation detectors for photometry, radiation control devices, etc., can solve problems such as quantum efficiency needs to be improved, and achieve reduced material and process costs and simple processes , The effect of saving the budget of the process

Inactive Publication Date: 2011-06-08
MAXCHIP ELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such devices can only sense light sources of a single wavelength, and the quantum efficiency (QE) needs to be improved

Method used

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  • Infrared sensing combined ambient light source sensor and manufacturing method thereof
  • Infrared sensing combined ambient light source sensor and manufacturing method thereof
  • Infrared sensing combined ambient light source sensor and manufacturing method thereof

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Embodiment Construction

[0057] Figures 1A to 1D It is a schematic cross-sectional view of a manufacturing method of an ambient light sensor combined with infrared sensing according to an embodiment of the present invention.

[0058] Please refer to Figure 1A, forming an infrared sensing structure 14 in the substrate 10 . The material of the substrate 10 is, for example, a doped semiconductor, such as a silicon substrate 10 with a P-type dopant, or an N-type doped silicon substrate 10 , or an undoped (undoped) silicon substrate. The infrared sensing structure 14 is, for example, a junction diode. The method for forming the junction diode includes forming a well region 12 in the substrate 10 . The well region 12 is in contact with the substrate 10 and its conductivity type is different from that of the substrate 10 . In an embodiment, the substrate 10 is a P-type doped silicon substrate 10; the well region 12 is an N-type doped region. The well region 12 is formed by, for example, forming a mask la...

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Abstract

The invention discloses an infrared sensing combined ambient light source sensor and a manufacturing method thereof. The sensor comprises a substrate, an ambient light sensing structure, an infrared sensing structure and a dielectric layer, wherein the ambient light sensing structure is located above the substrate and is used for sensing and filtering visible light; the infrared sensing structure is located in the substrate below the ambient light sensing structure and is used for sensing infrared rays; and the dielectric layer is located between the ambient light sensing structure and the infrared sensing structure.

Description

technical field [0001] The invention relates to a sensor and its manufacturing method, and in particular to an ambient light source sensor combined with infrared sensing and its manufacturing method. Background technique [0002] In recent years, sensing elements have been playing an important role in most industrial applications and automation control applications. Common sensing elements include temperature sensors, humidity sensors, pressure sensors, magnetic sensors, illuminance sensors, distance sensors, and so on. Among them, the ambient light sensor is increasingly popular due to the increasing popularity of liquid crystal panels and various mobile devices (such as mobile phones, personal digital assistants (PDA), global positioning systems (GPS), notebook computers (Notebook), small notebook computers (Netbook), etc.) And began to be widely used in the above-mentioned various consumer products. The ambient light sensor can sense the surrounding light sources to aut...

Claims

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Application Information

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IPC IPC(8): G01J1/42H01L27/144H01L21/82
Inventor 张锦维徐仁耀王鸿宪陈宥先
Owner MAXCHIP ELECTRONICS CORP
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