Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of phosphorus-silicon compound

A compound, phosphor-silicon technology, applied in chemical instruments and methods, compounds of Group 5/15 elements of the periodic table, organic chemistry, etc., can solve the problems of low product yield, difficult realization, harsh reaction conditions, etc. The effect of high yield, low cost and simple process

Inactive Publication Date: 2011-06-01
中国中化股份有限公司 +1
View PDF3 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned preparation method has the following disadvantages: 1. the reaction conditions are harsh, and the polymerization reaction needs to be carried out under a high vacuum of 0.1-0.15mmHg, which is difficult to realize industrially; 3 days; 3. The yield of the product is not high. According to the method introduced in the literature, the yield is less than 80%, and this method usually only produces products with a degree of polymerization n=2~3, and it is difficult to synthesize products with a higher degree of polymerization n phosphosilicate
So far, no other preparation methods have been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

Embodiment 2

Embodiment 3

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Freezing pointaaaaaaaaaa
Freezing pointaaaaaaaaaa
Freezing pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a phosphorus-silicon compound which is shown in the general formula (1) disclosed in the specification. The method comprises: phosphate and chlorosilane are utilized to be subjected to direct polycondensation at the atmospheric pressure in one step so as to obtain the target product with high yield. By adjusting the molar ratio of the phosphate to the chlorosilane, the degree of polymerization of the product can be controlled. The phosphorus-silicon compound can be used as a fire retardant and used in macromolecular materials such as plastics and rubbers. In the formula (1), R1 represents C1-C4 alkyl; R2 represents C1-C4 alkyl, C1-C4 alkoxy or H; R3 represents C1-C4 alkyl or aryl; and n represents an integer within a range of 2-2000.

Description

technical field The invention belongs to the field of organic synthesis and relates to the preparation of functional polymer auxiliary chemicals. Specifically relates to a preparation method of a phosphorus silicon compound. Background technique Phosphorus-silicon compound is a P-O-Si type copolymer compound. On the main chain, phosphorus and silicon are separated by oxygen elements. The structure is shown in the general formula (1): Where: R 1 Each independently represents C 1 -C 4 Alkyl; R 2 Each independently represents C 1 -C 4 Alkyl, C 1 -C 4 Alkoxy or H; R 3 Each independently represents the same or different C 1 ~C 4 Alkyl or aryl; n represents an integer from 2 to 2000. As flame retardants, the above compounds can be widely used in polycarbonate, PC / ABS, PET, nylon and other polymer materials. The method for preparing the phosphorus silicon compound shown in general formula (1) in the prior art is disclosed in Phosphorus, Sulfur, and Silicon, 1992, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C07F9/40C08G77/30C08G79/04
Inventor 魏峰刘冬雪刘博徐龙鹤李建华姚齐
Owner 中国中化股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products