Blocking type surge protection device of low-conductive resistor
A technology of surge protection devices and low on-resistance, which is applied in the direction of protection against overcurrent and overvoltage, and can solve problems such as limiting system bandwidth, high unit cost, and high failure rate. Achieve the effect of improving performance, low unit cost, and realizing overvoltage and overcurrent protection
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Embodiment 1
[0066] see figure 1 As shown in the schematic diagram of the circuit structure of Embodiment 1 of the present invention, a bidirectional blocking surge protection device, the surge protection device 10 is composed of a first depletion type field effect transistor Q1 (depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), second depletion mode field effect transistor Q2 (depletion mode N channel metal oxide semiconductor field effect transistor NMOSFET), third depletion mode field effect transistor Q3 (depletion mode P channel junction field effect transistor PJFET), the first variable resistance element 101, the second variable resistance element 102, the first resistor R1 (constant current source resistance) and the second resistance R2 (constant current source resistance) form a series structure The conduction path of the surge protection device 10 (BSP) forms a circuit module, wherein the connection relationship of each device inside the surge ...
Embodiment 2
[0081] see figure 2 As shown in the schematic diagram of the circuit structure of Embodiment 2 of the present invention, it is an improved structure for the surge protection device of Embodiment 1. In the surge protection device 20, the first variable resistance element 201 and the second variable resistance The element 202 is an N-channel depletion field-effect crystal whose gate and drain are short-circuited.
[0082]The surge protection device 20 also includes a first feedback voltage divider R and a second feedback voltage divider R', wherein the first feedback voltage divider R is composed of a fourth resistor R4 and a fifth resistor R5 connected in series, and the fourth resistor R4 Between the fifth resistor R5 and the middle node of the first feedback voltage divider R, the first feedback voltage divider R is connected in parallel with the source S of the first depletion type field effect transistor Q1 and the third depletion type field effect transistor Between the ...
Embodiment 3
[0086] see image 3 As shown in the schematic diagram of the circuit structure of Embodiment 3 of the present invention, it is another improvement scheme for the surge protection device of Embodiment 2. In the surge protection device 30, the first variable resistance element 301 and the second variable resistance The element 302 is a P-channel depletion field-effect crystal whose gate and drain are short-circuited.
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