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Blocking type surge protection device of low-conductive resistor

A technology of surge protection devices and low on-resistance, which is applied in the direction of protection against overcurrent and overvoltage, and can solve problems such as limiting system bandwidth, high unit cost, and high failure rate. Achieve the effect of improving performance, low unit cost, and realizing overvoltage and overcurrent protection

Inactive Publication Date: 2011-05-25
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (2) Will limit system bandwidth (capacitive loads limit them to low-bandwidth applications);
[0006] (3) A complex design consisting of multiple components is required, resulting in a high failure rate;
[0007] (4) Often require a larger space;
[0008] (5) For the protection design scheme, the unit cost is high
However, in some applications, low on-resistance is required under the condition of small trigger current, at this time, conventional blocking surge protection devices cannot meet the requirements

Method used

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  • Blocking type surge protection device of low-conductive resistor
  • Blocking type surge protection device of low-conductive resistor
  • Blocking type surge protection device of low-conductive resistor

Examples

Experimental program
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Effect test

Embodiment 1

[0066] see figure 1 As shown in the schematic diagram of the circuit structure of Embodiment 1 of the present invention, a bidirectional blocking surge protection device, the surge protection device 10 is composed of a first depletion type field effect transistor Q1 (depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), second depletion mode field effect transistor Q2 (depletion mode N channel metal oxide semiconductor field effect transistor NMOSFET), third depletion mode field effect transistor Q3 (depletion mode P channel junction field effect transistor PJFET), the first variable resistance element 101, the second variable resistance element 102, the first resistor R1 (constant current source resistance) and the second resistance R2 (constant current source resistance) form a series structure The conduction path of the surge protection device 10 (BSP) forms a circuit module, wherein the connection relationship of each device inside the surge ...

Embodiment 2

[0081] see figure 2 As shown in the schematic diagram of the circuit structure of Embodiment 2 of the present invention, it is an improved structure for the surge protection device of Embodiment 1. In the surge protection device 20, the first variable resistance element 201 and the second variable resistance The element 202 is an N-channel depletion field-effect crystal whose gate and drain are short-circuited.

[0082]The surge protection device 20 also includes a first feedback voltage divider R and a second feedback voltage divider R', wherein the first feedback voltage divider R is composed of a fourth resistor R4 and a fifth resistor R5 connected in series, and the fourth resistor R4 Between the fifth resistor R5 and the middle node of the first feedback voltage divider R, the first feedback voltage divider R is connected in parallel with the source S of the first depletion type field effect transistor Q1 and the third depletion type field effect transistor Between the ...

Embodiment 3

[0086] see image 3 As shown in the schematic diagram of the circuit structure of Embodiment 3 of the present invention, it is another improvement scheme for the surge protection device of Embodiment 2. In the surge protection device 30, the first variable resistance element 301 and the second variable resistance The element 302 is a P-channel depletion field-effect crystal whose gate and drain are short-circuited.

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PUM

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Abstract

The invention relates to a blocking type surge protection device of low-conductive resistor, which has low-conductive resistor characteristics under the application of small trigger current, at least comprising first, second and third depletion type field effect transistors Q1, Q2, Q3; first and second variable resistor elements; a conductive path formed by the serial connection of first and second resistors, and a circuit forming module, wherein the drain electrode of Q1 is connected to the a module input end; the grid electrode of Q1 is connected to the source electrode of Q2; the drain electrode of Q2 is connected to a module output end; the grid electrode of Q2 is connected to the source electrode of Q1; the first variable resistor element is connected to the source electrodes of Q1 and Q3; the second variable resistor element is connected to the source electrode of Q2 and the drain electrode of Q3; the grid electrode of Q3 is respectively connected to the first and second resistors; the other end of the first resistor is connected to the module input end; the other end of the second resistor is connected to the module output end. The device of the invention can specifically protect a single load, and can be used in a system with a high bandwidth.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of semiconductor surge protection devices, and is a low on-resistance blocking surge protection device. Background technique [0002] Power surge or transient overvoltage is defined as a voltage that significantly exceeds the design value in an electronic circuit. It mainly includes lightning strikes, power line laps, power line induction, or ground bounce. When the surge is high enough, the transient overvoltage will cause serious damage to electronic equipment such as computers and telephones. It also results in reduced equipment life. [0003] Transient voltage surge suppressors limit the energy of electrical surges that couple to equipment, thereby protecting electronic equipment from damage. Products in this category include: surge protection thyristors, oxide varistors and avalanche diodes. Both types of devices are connected in parallel in the protected ci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H3/20H02H3/08
Inventor 苏海伟张关保王永录叶力吴兴农
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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