Monocrystal ingot manufacturing device

Abstract

The invention discloses a monocrystal ingot manufacturing device which comprises a main body, a crucible, at least two primary heaters, a crystal seed holder, a thermal insulation component and a bottom heater, wherein the crucible is arranged in the main body; the at least two primary heaters are separately arranged on the circumference of the crucible in the axial direction of the crucible, and independently control the temperature; the crystal seed holder is positioned above the crucible and used for holding seed crystals; the thermal insulation component is arranged around the crucible; and the bottom heater is arranged below the crucible. According to the monocrystal ingot manufacturing device disclosed by the embodiment of the invention, the at least two primary heaters which independently control the temperature can greatly reduce the convection in the molten mass, thereby effectively improving the crystal quality. In addition, in the later period of the crystal growth, the liquid level of the molten mass lowers, and at this time, the power of the upper heater can be greatly reduced on the premise of keeping the power of the lower primary heater unchanged to ensure that the temperature of the molten mass is not decreased, thereby effectively lowering the power consumption in the whole crystal growth process and preventing the phenomenon of pot adhesion due to the overlow temperature of the molten mass.

Description

technical field [0001] The invention relates to the field of manufacturing single crystal ingots, in particular to a manufacturing device for sapphire single crystal ingots. Background technique [0002] During the traditional Kyropoulos growing sapphire crystal, the feed material in the crucible is melted by a main heater surrounding the outside of the crucible. In this process, since there is only one main heater, the convection in the melt is relatively serious, although the convection can take the bubbles in the melt out of the melt surface. However, the convection in the melt can easily cause the phenomenon of melting back during crystal growth, which will adversely affect the quality of the crystal. Therefore, when growing sapphire crystals by the Kyropoulos method, the convection in the melt needs to be as small as possible. [0003] In order to obtain larger sapphire crystals, it is often necessary to increase the size of the crucible. The diameter of the crucible...

AI Technical Summary

Problems solved by technology

from Image 6 It can be seen in the figure that there are two obvious convective vortices in the melt M', one is in the center of the melt M', and the other is near the side wall of the crucible 2', the convection intensity is strong, and it is easy to cause the crystal to melt back , so that the quality of crystal N is not good

[0004] In addition, when there is only one main heater, even if there is less melt in the later stage of crystal growth, in order to ensure the temperature of the melt, the main heater is still required to maintain a large power, making the power consumption of the sapphire crystal growth process very big

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