Bidirectional triode thyristor for electrostatic discharge protection of radio frequency integrated circuit

Abstract

The invention discloses a bidirectional triode thyristor for electrostatic discharge protection of a radio frequency integrated circuit, comprising a P-type substrate on which a P trap, a first N trap and a second N trap are arranged, wherein the first N trap and the second N trap are arranged at two sides of the P trap; a first N<+> injection region, a first P<+> injection region and a third N<+> injection region which are isolated by a shallow ditch are sequentially arranged above the first N trap from the outside to the inside, wherein the third N<+> injection region crosses the junction of the first N trap and the P trap; a second N<+> injection region, a second P<+> injection region and a fourth N<+> injection region which are isolated by a shallow ditch are sequentially arranged above the second N trap from the outside to the inside, wherein the fourth N<+> injection region crosses the junction of the second N trap and the P trap; and the surface of the P trap arranged between the third N<+> injection region and the fourth N<+> injection region is covered with gate oxide and polysilicon gates which are stacked in sequence from bottom to top. By utilizing the source-drain punchthrough of an NMOS (N-Channel Metal Oxide Semiconductor) to assist in triggering, the bidirectional triode thyristor provided by the invention has small starting voltage and parasitic capacitance and strong robustness and can provide bidirectional ESD (Electro-Static Discharge) protection.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a bidirectional thyristor used for electrostatic discharge protection of radio frequency integrated circuits. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature poses a serious threat to the reliability of integrated circuits. In the industry, 30% of the failures of integrated circuit products are caused by electrostatic discharge. After entering the nanometer era of integrated circuits, the thinner gate oxide thickness greatly increases the probability of integrated circuits being damaged by electrostatic discharge. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products. [0003] The modes of electrostatic discharge phenomenon are usually divided into four types: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), CDM ...

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Problems solved by technology

However, the SCR trigger voltage is generally high, and it cannot effectively protect the working voltage of 5V and below.

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