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Resist coating and developing apparatus and method

A development device and development method technology, applied in photography, photoplate making process coating equipment, optics, etc., can solve the problems of deterioration of integrated circuit characteristics, large line width roughness, and failure to work normally

Active Publication Date: 2011-04-20
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the groove of a field effect transistor (FET) is formed with such a width, if the line width roughness (LWR) of the resist pattern is large, the threshold voltage fluctuation of the FET will occur, and the characteristics of the integrated circuit will deteriorate, or it will not work normally. work problem

Method used

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  • Resist coating and developing apparatus and method
  • Resist coating and developing apparatus and method
  • Resist coating and developing apparatus and method

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Embodiment Construction

[0025] Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the illustrated embodiments. In all the drawings, the same or corresponding reference signs are assigned to the same or corresponding components or components, and repeated explanations are omitted.

[0026] figure 1 is a schematic plan view showing the structure of a resist coating and developing device 1 according to an embodiment of the present invention, figure 2 is a schematic front view of the resist coating and developing device 1, image 3 It is a schematic rear view of the resist coating and developing device 1 .

[0027] Such as figure 1 As shown, a resist coating and developing apparatus 1 has a cassette loading and unloading station 2 , a processing station 3 and an interface unit 4 .

[0028] The cassette loading and unloading table 2 has a mounting portion 6 on which a cassette C containing, for example, 25 wa...

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Abstract

A resist coating / developing apparatus (1) includes: a resist film-forming unit configured to apply a resist onto a substrate (W) to form thereon a resist film; a resist developing unit (18) configured to develop the resist film after exposure to pattern the resist film; a solvent gas generator configured to generate a solvent gas containing a vapor of a solvent having a property of dissolving theresist film; a solvent gas conditioner connected to the solvent gas generator and configured to condition the solvent gas generated in the solvent gas generator; a processing chamber (62) configured to house the substrate having thereon the resist film which has been developed and patterned in the resist developing unit (18), and connected to the solvent gas conditioner so that the solvent gas, which has been conditioned in the solvent gas conditioning section, is supplied to the substrate (W) housed in the processing chamber (62); and an exhaust system connected to the processing chamber to evacuate the processing chamber to a reduced pressure.

Description

technical field [0001] The present invention relates to a resist coating and developing device and a resist coating and developing method for coating a resist film on a substrate and developing the exposed resist film to form a resist pattern. A resist coating and developing device and a resist coating and developing method capable of reducing line width roughness. Background technique [0002] In order to manufacture semiconductor integrated circuits with a higher degree of integration, further miniaturization is required. For example, for the minimum dimension (CD) of the etching mask, the exposure limit of the existing exposure equipment is reduced to 32nm and 22nm. When the groove of a field effect transistor (FET) is formed with such a width, if the line width roughness (LWR) of the resist pattern is large, the threshold voltage fluctuation of the FET will occur, and the characteristics of the integrated circuit will deteriorate, or it will not work normally. work pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/36G03F7/16G03F7/00G03F7/40H01L21/027
CPCH01L21/67109H01L21/6715H01L21/67115H01L21/6719H01L21/67748H01L21/67017G03F7/40G03F7/2041G03F7/70625G03F7/70916H01L21/0274
Inventor 稻富裕一郎
Owner TOKYO ELECTRON LTD
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