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Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof

A fluoride ion and prism technology is applied in the field of zinc oxide porous prism array film and its preparation and application. The effect of large-scale industrial production

Inactive Publication Date: 2011-04-13
HUAZHONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of this one-dimensional structure also has its disadvantages, that is, the specific surface area is not large enough, and the amount of dye molecules adsorbed is much less than that of porous particle membranes, which leads to the insufficient conversion efficiency of the existing one-dimensional ZnO-based DSSC.

Method used

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  • Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof
  • Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof
  • Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] 1. Prepare Zn(NO 3 ) 2 and NH 4 F mixed solution 1L, Zn(NO 3 ) 2 Molar concentration is 0.05M, NH 4The molar concentration of F is 0.2M. After stirring for half an hour, take 60ml of the prepared solution and pour it into a 100ml beaker. After suspending the conductive glass substrate, react for 1 hour under the condition of a chemical bath at 70°C. Take out the conductive glass substrate and use a deionized After rinsing with water, it was found that a dense, uniform transparent film had formed on the substrate. Dry the above film product and move it into a muffle furnace, sinter at 500°C for 1 hour, and operate at a rate of heating and cooling not exceeding 3°C / min to obtain a ZnO-F prismatic array film with a porous hierarchical structure.

[0035] Analytical tests showed (see attached figure) that the films obtained after the chemical bath reaction consisted of arrays of prisms with diameters ranging from 400 nm to 1 μm ( figure 1 , SEM picture), the length is...

Embodiment 2

[0038] A dense layer composed of small zinc oxide particles with a particle size of about 15 nanometers is pulled on the conductive glass substrate in advance. Formulated with Zn(NO 3 ) 2 and NH 4 F mixed solution 1L, Zn(NO 3 ) 2 Molar concentration is 0.05M, NH 4 The molar concentration of F is 0.2M. After stirring for half an hour, take 60ml of the prepared solution and pour it into a 100ml beaker. After suspending the conductive glass substrate with zinc oxide particles, react for 1 hour under the condition of a chemical bath at 70°C, and take out the substrate. , rinsed with deionized water, and found that a dense, uniform transparent film was formed on the substrate. Dry the above film product and move it into a muffle furnace, sinter at 500°C for 1 hour, and operate at a rate of heating and cooling not exceeding 3°C / min to obtain a ZnO-F prismatic array film with a porous hierarchical structure.

[0039] After 1 hour of chemical bath reaction, Zn(OH)F prisms with m...

Embodiment 3

[0041] Formulated with Zn(NO 3 ) 2 and NH 4 F mixed solution 1L, Zn(NO 3 ) 2 Molar concentration is 0.05M, NH 4 The molar concentration of F is 0.2M. After stirring for half an hour, take 60ml of the prepared solution and pour it into a 100ml beaker. After suspending the conductive glass substrate, react for 1 hour under the condition of a chemical bath at 85°C, take out the conductive glass substrate, and use a deionized After rinsing with water, it was found that a dense, uniform transparent film had formed on the substrate. Dry the above film product and move it into a muffle furnace, sinter at 500°C for 1 hour, and operate at a rate of heating and cooling not exceeding 3°C / min to obtain a ZnO-F prismatic array film with a porous hierarchical structure. The product is a diameter Very large, without obvious prism boundary structure.

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Abstract

The invention relates to a fluorinion (F)-doped zinc oxide (ZnO) porous prism array film and a preparation method thereof. The F-doped ZnO porous prism array film is prepared by a low-temperature chemical bath and subsequent heat treatment combined method. The preparation method comprises the following steps of: directly preparing prismatic a Zn(OH)F precursor array film on an electroconductive glass substrate by using mixed aqueous solution of zinc nitrate (Zn(NO3)2) and ammonium fluoride (NH4F) under the condition of low-temperature water bath at the temperature of 70 DEG C; and performing heat treatment at the temperature of 500 DEG C to obtain a ZnO-F prism array film with a nano porous structure. In the nano porous ZnO-F prism array film prepared by the method, the film appearance is uniform; the thickness can be controlled and can reach more than ten mu m; the specific area is large; and a single porous prism has a monocrystal structure. The product has a wide development application prospect in the fields of solar batteries, photocatalysis and the like. Energy consumption is low in the whole synthetic process; equipment is simple; conditions are simple and controllable; and large-scale industrial production is easy to realize.

Description

technical field [0001] The invention relates to the field of doping preparation of nano film. It specifically relates to a zinc oxide porous prism array film doped with fluorine ions and its preparation and application. Background technique [0002] ZnO is considered to be the most likely substitute for TiO 2 Semiconductor materials serving as photoanode substrates for dye-sensitized nano-solar cells (DSSCs) with and TiO 2 Similar band gap (3.37eV), but the electron mobility of ZnO (about 115~155cm 2 V -1 S -1 ) than anatase TiO 2 (about 10~5cm 2 V -1 S -1 ) is much higher, this high mobility is conducive to faster transport of electrons to the substrate, thereby reducing the energy loss due to recombination in DSSCs, but the photoelectric conversion efficiency of ZnO-based DSSCs is currently low. [0003] ZnO has the properties of easy crystallization and anisotropic growth. At present, people have successfully obtained ZnO nanostructures with various morphologies ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/04H01G9/20H01M14/00H01L51/44H01L51/48
CPCY02E10/542Y02E10/549Y02P70/50
Inventor 唐一文罗利娟陶薇
Owner HUAZHONG NORMAL UNIV
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