Photoresist stripping solution

Abstract

The invention relates to a photoresist stripping solution, in particular to a stripping solution suitable for residual photoresist on a semiconductor substrate. The photoresist stripping solution comprises the following raw materials in parts by weight: 1-15 parts of hydrazine hydrate or organic amines, 10-45 parts of solvent, 0.1-5 parts of etchant resist and the balance of pure water. The invention has the following advantages: 1, the photoresist stripping solution is suitable for stripping etched photoresist in an integrated circuit and an oversized integrated circuit; 2, the photoresist stripping solution can be used for eliminating etched photoresist films easily, has minimized corrosion on metal wires and is environment-friendly; and 3, the photoresist stripping solution can be used for rapidly washing the photoresist and residual photoresist on wafers so that no residues are on the wafers, and the photoresist stripping solution has low corrosion rate on substrate materials and metal wires.

Description

Technical field: [0001] The invention relates to a photoresist stripping solution, in particular to a residual photoresist stripping solution suitable for semiconductor substrates. Background technique: [0002] In the manufacturing process of integrated circuits and ultra-large integrated circuits, the photolithography step is generally to apply photoresist on SiO 2 On the sheet or metal film, after baking, exposure, and development, the required pattern with resist protection is obtained. Then an etching process is performed to transfer the pattern onto the surface of the wafer, and then the protective adhesive film covering the wafer is removed. [0003] Usually, more than a dozen photolithography processes are used in the process of manufacturing semiconductor devices, which includes removing the photoresist that is not covered by the photomask, forming a photolithographic pattern on the conductive layer of the semiconductor substrate, and then etching away The portion...

AI Technical Summary

Problems solved by technology

However, in dry etching, the ions and radicals of the plasma etching gas cause complex chemical reactions with the photoresist film, rapidly hardening the photoresist, and the photoresist becomes difficult to remove

Especially for dry etching of metal substrates, modified and hardened photoresist polymers are produced on the metal substrate layer, which are difficult to remove during lift-off, thus failing to meet market demand