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Production method capable of reducing internal air holes of monocrystalline silicon

A technology of internal pores and production methods, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of time, human and financial waste, and cost reduction

Active Publication Date: 2012-10-03
包头晶澳太阳能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These defective products can only be returned to the furnace for reuse, resulting in a waste of time and human and financial resources, which has become an important reason why the cost of silicon wafer manufacturers is difficult to reduce

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A production method for reducing the internal pores of monocrystalline silicon. When starting to work, first clean the thermal system in the furnace, then place the polycrystalline silicon solid in a quartz crucible, close the furnace door and turn on the vacuum pump to evacuate the furnace. Then open the argon valve to fill the furnace with argon, the argon flow can be controlled by adjusting the argon valve, and the pressure in the furnace can be controlled by adjusting the argon valve and vacuum pump; after that, the heating system is turned on to heat the material, at this time Set the filled argon gas flow rate to 10L / min, and the pressure in the furnace to 280Pa, so that most of the bubbles in the silicon liquid or the crucible can be eliminated by using a high vacuum degree;

[0019] After the chemical material is completed, it enters the heat preservation and stabilization stage. At this time, the crucible starts to rotate, and the rotation speed of the crucible ...

Embodiment 2

[0023] The difference between this embodiment and embodiment 1 is:

[0024] ① In the step of heating silicon materials, the flow rate of argon gas is 12 L / min, and the pressure in the furnace is 350 Pa;

[0025] ② In the single crystal necking step, the flow rate of argon gas is 22 L / min, and the pressure in the furnace is 650Pa.

[0026] The test results show that through the improvement of the above steps, the pore content in the solid single crystal is reduced by 27.3% on average.

Embodiment 3

[0028] The difference between this embodiment and embodiment 1 is:

[0029] ①In the step of heating silicon material, the flow rate of argon gas is 13 L / min, and the pressure in the furnace is 400 Pa;

[0030] ②In the single crystal necking step, the flow rate of argon gas is 25 L / min, and the pressure in the furnace is 700Pa.

[0031] The test results show that through the improvement of the above steps, the pore content in the solid single crystal is reduced by 29.7% on average.

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PUM

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Abstract

The invention discloses a process method for use in a crystal pulling process in monocrystalline silicon production, in particular a production method capable of reducing internal air holes of monocrystalline silicon, which is implemented by reducing argon flow and furnace pressure in a silicon material heating and melting step, increasing rotation speed in a crucible rotating step and increasingargon flow and furnace pressure in a monocrystal drawing step. In the invention, the removal of air bubbles from molten silicon or crucible can be realized, so the air bubble content of solid monocrystals is lowered and the yield of products is improved.

Description

technical field [0001] The invention relates to a process method in the process of producing and pulling single crystal silicon, in particular to a production method for reducing internal pores of single crystal silicon. Background technique [0002] The production of single crystal silicon generally needs to be produced by a single crystal furnace. The single crystal furnace is equipped with a quartz crucible and a heating system. The quartz crucible is placed on a crucible holder matched with a rotating mechanism to realize rotation. At present, the crystal pulling process of monocrystalline silicon production generally includes the following process steps: cleaning silo-loading-vacuumizing-argon filling-heating chemical material-crucible rotation-single crystal necking-shoulder placement-shoulder rotation-equal diameter-finishing - Cooling - Dismantling the furnace - Inspection, etc. When starting to work, first clean the silo in the furnace, then place the polysilicon s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 刘英江李广哲刘军坡
Owner 包头晶澳太阳能科技有限公司
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