Preparation method of nanocrystalline silicon-aluminum oxide/silicon oxide thermoelectric film material

Abstract

The invention discloses a preparation method of a nanocrystalline silicon-aluminum oxide / silicon oxide thermoelectric film material. The preparation method comprises the following steps: cleaning a quartz glass substrate, performing vacuum evaporation of an aluminum film and annealing. As the metal aluminum with relatively low cost is used as a thermal evaporation material, the resistivity and the Seebeck coefficient of the prepared nanocrystalline silicon-aluminum oxide / silicon oxide thermoelectric film material are as good as or better than those of the traditional thermoelectric film material. Compared with the traditional thermoelectric material and the preparation method thereof, the invention has the advantages of simple preparation method, relatively low temperature and low production cost, ensures no environmental pollution and can be popularized and applied in the production of preparing the nanocrystalline silicon-aluminum oxide / silicon oxide thermoelectric film material.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a thermoelectric material, in particular to a nanocrystalline silicon-alumina / silicon oxide thermoelectric film material. Background technique [0002] Thermoelectric materials are functional materials that can convert heat and electricity into each other. Existing thermoelectric materials include semiconductor alloy thermoelectric materials (such as Bi 2 Te 3 , PbTe, SiGe, etc.), cobaltate oxide thermoelectric materials (such as NaCo 2 o 4 , Ca 3 co 4 o 9 , Ca 3 co 2 o 6 etc.), metal alloy solid solution thermoelectric materials (such as AgTiTe, ZrNiSn, TiNiSn, etc.), metal silicide thermoelectric materials (such as FeSi 2 , MnSi 2 、CrSi 2 etc.), Skutterudite thermoelectric material (its general formula is AB 3 , A is a metal element, such as Ir, Co, Rh, Fe, etc., B is a group V element, such as As, Sb, P, etc., such as CoSb 3 ). [0003] Thermoelect...

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Problems solved by technology

Although thermoelectric materials have many of the advantages mentioned above, some materials contain toxic elements (such as Bi, Pb, As, Sb, P, etc.), some have low content on the earth, and some have complex preparation processes that require high temperatures, especially the thermoelectric figure of merit ( ZT) is small, the thermoelectric conversion efficiency is low, and the preparation process is not compatible with the current development trend of the microelectronics manufacturing industry, which hinders its further development in the field of "microscopic" refrigeration

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