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Nitride semiconductor chip, method of fabrication thereof, and semiconductor device

A nitride semiconductor and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor lasers, laser parts and other directions, and can solve problems such as low luminous efficacy, surface morphology deterioration of nitride semiconductor layers, and low gain.

Inactive Publication Date: 2011-01-12
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, in semiconductor laser chips, low luminous efficacy is a serious problem because it results in low gain
[0013] In addition, unlike the nitride semiconductor layer grown on the c-plane, in the case where the nitride semiconductor layer is grown on the m-plane of the nitride semiconductor substrate, the growth of the nitride semiconductor layer tends to be unstable.
For a nitride semiconductor light-emitting chip (nitride semiconductor chip) using a nitride semiconductor substrate having an m-plane as a main growth plane, this causes another problem, specifically, a problem that the surface morphology of the nitride semiconductor layer tends to deteriorate

Method used

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  • Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
  • Nitride semiconductor chip, method of fabrication thereof, and semiconductor device
  • Nitride semiconductor chip, method of fabrication thereof, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0159] figure 1 is a schematic diagram showing a crystal structure of a nitride semiconductor. figure 2 is a cross-sectional view showing the structure of a nitride semiconductor laser chip according to a first embodiment (Embodiment 1) of the present invention. image 3 is an overall perspective view of a nitride semiconductor laser chip according to Embodiment 1 of the present invention. Figure 4 to Figure 6 is a view showing the structure of a nitride semiconductor laser chip according to Embodiment 1 of the present invention. First, refer to Figures 1 to 6 , the structure of the nitride semiconductor laser chip 100 according to Embodiment 1 of the present invention will be described.

[0160] The nitride semiconductor laser chip 100 according to Embodiment 1 consists of a figure 1 The nitride semiconductor is formed with a hexagonal crystal structure shown. In this crystal structure, when the hexagonal system is regarded as a hexagonal column about the c-axis [00...

Embodiment 2

[0226] Figure 23 is a cross-sectional view showing the structure of a nitride semiconductor laser chip according to a second embodiment (Embodiment 2) of the present invention. Figure 24 is an overall perspective view of a nitride semiconductor laser chip according to Embodiment 2 of the present invention. Figure 25 with Figure 26 is a view showing the structure of a nitride semiconductor laser chip according to Embodiment 2 of the present invention. Next, refer to Figures 23 to 26 , the structure of a nitride semiconductor laser chip 1100 according to Embodiment 2 of the present invention will be described.

[0227] Such as Figure 23 with 24 As shown, a nitride semiconductor laser chip 1100 according to Embodiment 2 is formed by using a GaN substrate 10 similar to the previously described Embodiment 1, and has a plurality of nitride semiconductor laser chips stacked on the main growth plane 10a of the GaN substrate 10 Floor. That is, in Embodiment 2, like Embodim...

example 4

[0288] As the nitride semiconductor laser chip according to Practical Example 4, by using a GaN substrate having an off-angle of 6 degrees in the a-axis direction and an off-angle of -1.1 degrees in the c-axis direction with respect to the m-plane {1-100} , where the barrier layer consists of Al s In t Ga u A nitride semiconductor laser chip formed of N(s+t+u=1) was fabricated. In Practical Example 4, the first barrier layer is made of Al s In t Ga u N (s=0.01, t=0, u=0.99), the second and third barrier layers are made of Al s In t Ga u N (s=0.02, t=0.01, u=0.97) formed. That is, in Practical Example 4, the first barrier layer is formed of AlGaN, and each of the second and third barrier layers is formed of AlInGaN. The structure of Practical Example 4 is similar to that of the above-described embodiment (Practical Example 2) except for other aspects of the barrier layer. Practical Example 4 provides effects similar to those of Practical Example 2 above. Incidentally...

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PUM

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Abstract

A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate.

Description

technical field [0001] The present invention relates to a nitride semiconductor chip, a method for manufacturing the nitride semiconductor chip, and a semiconductor device. More specifically, the present invention relates to a nitride semiconductor chip provided with a nitride semiconductor substrate, a method of manufacturing the nitride semiconductor chip, and a semiconductor device including such a nitride semiconductor chip. Background technique [0002] Nitride semiconductors exemplified by GaN, AlN, InN and their mixed crystals are characterized by having a wider band gap Eg than AlGaInAs-based semiconductors and AlGaInP-based semiconductors, and are also direct band gap materials. For these reasons, nitride semiconductors are used as components for constructing semiconductor light-emitting chips (such as semiconductor laser chips that emit light in the wavelength region from ultraviolet light to green light and light-emitting diode chips that cover a wide emission wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01S5/343
CPCH01L21/0243H01L21/02389H01L21/02433H01L21/0262H01L21/0254
Inventor 神川刚太田征孝
Owner SHARP KK
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