Device and method for depositing ultrathin alumina film by atomic layer

Abstract

The invention relates to device and method for depositing an ultrathin alumina film by an atomic layer. Plasma is generated by combining double frequency which is microwave ECR with radio frequency negative bias voltage equipment and used for depositing the alumina film. By using the microwave ECR and the radio frequency negative bias voltage system, the work gas generates the plasma; and by using trimethyl aluminum (TMA) as a monomer and the mode of TMA-Ar-O2-Ar alternate pulse, the alumina film is deposited by using the atomic layer, wherein the deposition temperature is room temperature. By adopting the generating mode of using the plasma as an active group, the deposition can be carried out in a lower ambient temperature, the growth speed is higher compared with the deposition by a hot atomic layer and is about 0.12nm / period and the quality of the prepared film is higher compared with the deposition by the hot atomic layer. The prepared Al2O3 film can be widely applied to the fields of microelectronic devices, electroluminescent devices, wave optical devices, corrosion-resistant coatings and the like.

Description

Technical field: [0001] The invention relates to a new method for depositing an ultra-thin aluminum oxide film by atomic layer, in particular using dual-frequency microwave ECR and radio frequency negative bias equipment to generate plasma to deposit aluminum oxide film. Background technique: [0002] Aluminum oxide (Al 2 o 3 ) film has many excellent physical and chemical properties, such as: high dielectric constant, high thermal conductivity, strong resistance to radiation damage, strong resistance to alkali ion penetration and transparency in a wide range of wavelengths. Therefore, Al 2 o 3 Thin films are widely used in many fields such as microelectronic devices, electroluminescent devices, optical waveguide devices, and anti-corrosion coatings. Especially in microelectronic devices, Al 2 o 3 Due to the advantages of large dielectric constant and large energy band shift in contact with Si, thin film is the best choice to replace SiO 2 One of the competitive mater...

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Problems solved by technology

In the mid-to-late 1980s, the use of ALD technology to grow II-VI and III-V single crystal compounds and to prepare ordered heterogeneous superlattices has received extensive attention, but due to the complexity of surface chemical reactions, there has been no research in this field. made a substantial breakthrough

[0013] At present, the application of microwave ECR plasma technology in China is very mature and common. Among them, the most widely used technology is the State Key Laboratory of Surface Modification of Three-beam Materials of Dalian University of Technology. Their researchers used this technology to carry out nitriding The preparation of gallium thin films, the low-temperature growth of aluminum nitride single crystal thin films and the synthesis of diamond-like thin films, etc.; Xu Min from Fudan University and others used ALD technology to study the atomic layer growth of aluminum oxide thin films, and for the application of microwave ECR plasma There are few reports on the atomic layer growth of aluminum oxide thin film

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