Erbium-doped gadolinium lithium fluoride crystal and growth method thereof
A technology of erbium-gadolinium lithium fluoride and crystal growth, which is applied in the field of optoelectronic materials, can solve the problems of severe volatilization of raw materials, high melting point, and difficult growth, and achieve the effect of reducing volatilization of raw materials
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[0017] The erbium-doped gadolinium lithium fluoride crystal of the present invention belongs to the tetragonal crystal system, and the rare earth erbium is used as the active ion, and the molecular formula of the erbium-doped gadolinium lithium fluoride crystal is Er:LiGdF 4 , the crystal matrix is lithium gadolinium fluoride, and the doping concentration of erbium is 20-50 at.%.
[0018] Growth method of the present invention is specifically as follows:
[0019] 1. Preparation of growth material
[0020] LiF by LiF:GdF 3 =16.5~17:7.76~8 added in excess. The ratio of each component in the raw material is as follows, ErF 3 is x moles, GdF 3 is (1-x) moles, and LiF is 2.125 (1-x) moles, where the value range of x is: 0.005mol≤x≤1mol. The components are fully mixed, treated with HF atmosphere, and pressed into blocks by a hydraulic press to obtain a block growth material.
[0021] 2. Crystal growth
[0022] Growth of Er:LiGdF by pulling method 4 crystals. Put the prepa...
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