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Vertical shower type MOCVD reactor

A spray type, reactor technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., to achieve the effect of eliminating disturbance, improving growth quality, and eliminating gas phase parasitic reactions

Inactive Publication Date: 2010-09-08
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, today's MOCVD reactors have a lot of room for improvement, and the design of new scalable reactors is more urgent.

Method used

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  • Vertical shower type MOCVD reactor

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Embodiment Construction

[0030] The invention designs a novel rotating shower head-isolated substrate holder MOCVD reactor, especially improves the structure of the shower head and substrate holder used in the reactor. The shower head of the reactor rotates, and the reaction gas is sprayed from different areas; each substrate holder is isolated and distributed under the nozzle in a ring shape, and the substrate holder is fixed and does not rotate. The invention can effectively prevent the occurrence of pre-reaction, realize the growth of high-quality compound semiconductor materials (such as AlN, AlGaN, etc.), eliminate the inhomogeneity of thickness and composition between substrates, realize the growth of repeating units, and then expand the reactor infinitely capacity.

[0031] The vertical spray MOCVD reactor mainly includes a reaction chamber, a spray head, a substrate support, a heating system, an inlet and an exhaust port, and a cooling water inlet and outlet. The reaction chamber is cylindric...

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Abstract

The invention discloses a vertical shower type metal organic chemical vapor deposition (MOCVD) reactor, which comprises a reaction chamber, a shower head on the top of the reaction chamber, cooling water inlet and outlet of the shower head, substrate holders at the bottom of the reaction chamber, a heater and a gas outlet, wherein a gas inlet for inputting the reaction gas is formed in the shower head; the vertical shower type MOCVD reactor is characterized in that more than three independent regions are formed in the cavity of the shower head at intervals; each independent region is provided with an independent gas inlet; a rotating shaft is penetrated through the axial centre of the shower head; the shower head is in linkage with the rotating shaft; and the plurality of substrate holders are relatively isolated and annularly arranged at the bottom of the reaction chamber. Due to the application of the technical scheme of the invention, the reaction gases are isolated and showered in sequence so as to effectively eliminate the gaseous-phase parasitic reaction; and meanwhile the tail gas after the reaction can quickly flow off through the gap of each substrate holder to be discharged from the reactor; therefore, the turbulence effect of the accumulated tail gas on the reaction gas is effectively eliminated to improve the growth quality of an epitaxial wafer and make the realization of infinitely increasing the wafer loading capacity possible.

Description

technical field [0001] The invention relates to a semiconductor thin film deposition equipment, in particular to a new vertical spray MOCVD reactor and its spray head and substrate holder structure. The purpose is to control the flow path of the gas in the reactor, so that the gas flow rate, temperature and reactant concentration above the substrate are uniformly distributed, so as to obtain a film deposition with a complete lattice structure, uniform thickness and composition. Background technique [0002] Metal organic chemical vapor deposition (MOCVD, Metalorganic Chemical VaporDeposition) is a key technology for preparing compound semiconductor thin films. It uses more volatile organic compounds such as Ga(CH 3 ) 3 etc., as the source reactants of metal atoms that are difficult to volatilize, are carried into the reactor by the carrier gas, and NH 3 , AsH 3 Wait for the hydride to react, and generate GaN, GaAs and other thin films on the heated substrate, which are u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/00
Inventor 王国斌张永红王怀兵邱凯朱建军张宝顺杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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