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Production method of semi-transmission type TFT array substrate

The technology of an array substrate and manufacturing method, which is applied in the field of semi-transmissive TFT array substrate manufacturing, can solve the problems of easy peeling off of the transmissive film layer, and achieve the effect of saving production time and simple and practical process

Active Publication Date: 2013-09-25
TRULY SEMICON
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  • Description
  • Claims
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Problems solved by technology

[0007] In view of this, an embodiment of the present invention provides a method for manufacturing a semi-transmissive TFT array substrate, which solves the problem that the transmissive film layer on the TFT array substrate is easy to fall off during the manufacturing process of a semi-transmissive liquid crystal display.

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  • Production method of semi-transmission type TFT array substrate
  • Production method of semi-transmission type TFT array substrate

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0040] Firstly, the manufacturing method of the semi-transmissive TFT array substrate is described, refer to figure 1 As shown, the manufacturing method may include:

[0041] Step 101, sputtering a gate metal layer on the glass substrate, and the gate metal layer forms a gate pattern through photolithography;

[0042] Step 102, continuously depositing a gate insulating layer and a semiconductor layer on the gate metal layer, and forming a semiconductor...

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Abstract

The invention discloses a production method of a semi-transmission type TFT array substrate, which comprises the following steps of: sputtering a grid electrode metal layer on a glass substrate, and photoetching the grid electrode metal layer to form into a grid electrode pattern; continuously depositing a grid electrode insulating layer and a semiconductor layer on the grid electrode metal layer, and photoetching the semiconductor layer to form into a semiconductor layer pattern; sputtering a source-drain electrode metal layer on the semiconductor layer pattern, and photoetching the source-drain electrode metal layer to form into a source-drain electrode layer pattern; depositing an insulating film protection layer on the source-drain electrode metal layer, and photoetching the insulating film protection layer to obtain an insulating film protection layer pattern; sputtering a transparent pixel layer, and photoetching the transparent pixel layer to form into a pixel electrode; and sputtering a metal reflection layer and a transmission film layer protection layer on the transparent pixel layer, photoetching to form into a pixel metal reflection layer pattern, and etching to remove the transmission film layer protection layer. The production method can solve the problem that the transmission film layer on the TFT array substrate is easily fallen during producing a semi-transmission type liquid crystal display.

Description

technical field [0001] The invention relates to the technical field of liquid crystal manufacturing, and more specifically, relates to a method for manufacturing a semi-transmissive TFT array substrate. Background technique [0002] With the rapid development of liquid crystal manufacturing technology, thin film transistor (TFT, Thin Film Transistor) liquid crystal display has more and more uses in modern life, such as: mobile phone display screen, notebook computer display screen, MP3, MP4 display screen, GPS Display screen and LCD TV display screen, etc. [0003] Due to the continuous enrichment of liquid crystal applications, people's requirements for liquid crystal performance are also getting higher and higher, especially the visibility requirements of liquid crystals, which not only require liquid crystals to have good visibility when the indoor light is relatively soft, but also have strong visibility outdoors. Good visibility is also required in sunlight. For ordin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84
Inventor 任思雨李建于春崎谢凡胡君文李林何基强
Owner TRULY SEMICON
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