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Method for repairing oxidized graphene by organic matter containing amino group at low temperature

A repair method and amino group technology, which is applied in the field of repairing oxidized graphene, can solve problems such as explosion and fast reaction speed of sodium borohydride, and achieve the effects of low reaction temperature, non-toxic reaction system, and improved electrical conductivity

Inactive Publication Date: 2010-07-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One is that sodium borohydride is an explosive substance, if it is not handled properly, it can easily cause an explosion
Second, like hydrazine hydrate, the reaction speed of sodium borohydride is too fast

Method used

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  • Method for repairing oxidized graphene by organic matter containing amino group at low temperature
  • Method for repairing oxidized graphene by organic matter containing amino group at low temperature
  • Method for repairing oxidized graphene by organic matter containing amino group at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Mix 50mg of graphene that has been violently oxidized by strong acid with 1g of urea powder, grind it, let it mix evenly, put it into a crucible, and let it fully react for more than 24 hours in an oven at 150°C. After it cools, take it out and dissolve it in the water solution. The solution was filtered and washed with water continuously. Put the cleaned powder into an oven at 90°C for more than 1 hour to dry. Through the measurement of its powder resistance, it can be seen that it is an insulator before repairing, and the resistance is too large to be measured. The repaired resistance is less than 100 ohms.

Embodiment 2

[0024] Pour 50mg of graphite that has been violently oxidized by a strong acid into a urea solution with a concentration of 1g / 2ml, ultrasonicate in a water bath for 15 minutes, and let it mix thoroughly. The solution was sealed and placed in an oven at 90° C. to allow the two to fully react for more than 1 day. Take it out, and after it cools down, filter its solution, and then wash it with water continuously. Put the cleaned powder into an oven at 90°C for more than 1 hour to dry. The resistance after the reaction is also reduced from insulation to below 100 ohms. From the topography of the transmission electron microscope ( figure 1 ) It can be seen that the oxidized graphene has a relatively complete structure, no cracks, a small thickness, and no shrinkage (a). The reduced graphene has more cracks, larger thickness, and shrinkage of the sheet structure (b). It can be seen from the electron diffraction pattern that the oxidized graphene sheet has fewer layers (c), only...

Embodiment 3

[0028] Put the oxidized graphene film into 100ml of an aqueous solution containing 10g of urea, seal the solution and put it in an oven at 90°C to allow the two to fully react for more than 1 day. After it cools down, take out the film, soak it in the aqueous solution for more than 1 minute, so as to clean off the excess urea and other reaction intermediate products sticking to the film, and then put it into an oven at 90°C to dry for more than 1 hour. From the XPS graph ( image 3 ), it can be seen that the oxygen content after restoration is significantly reduced. At the same time, the peak position did not change. That is, no doping occurs. From the resistance data (Table 2), it can be seen that the resistance of the repaired graphene is greatly reduced, and the conductivity is greatly improved. It can also be directly proved that the urea-based organic substances with amine groups can well repair the oxidized graphene.

[0029] Table 2: The electrical resistance data o...

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Abstract

The invention relates to a method for repairing oxidized graphene by an organic matter containing an amino group at low temperature, which is characterized by comprising the following steps of: reducing the oxidized graphene with defects by an organic matter containing an amino group; filtering all matters after reduction and removing an excessive reducing matter without any matter retained on the graphene; and finally drying. The invention has simple, convenient and easily-applied operation, low reaction temperature and non-toxic reaction system. The reaction can be carried out in a solid phase and a liquid phase, and the operating process can not introduce a new matter or group and cause damage in other ways to the graphene. The graphene repaired by the method greatly has greatly reduced carbonyl content and the conducting performance improved by more than six magnitude orders. Furthermore, the method can be also used for repairing a graphene conducting thin film so that the graphene conducting thin film is changed into a conductor from an insulator. The invention has general applicable significance for fully exerting various specific physical and chemical performance of the graphene.

Description

technical field [0001] The present invention relates to a method for repairing oxidized graphene with amino-group-containing organic matter at low temperature, more precisely, relates to a method for repairing oxidized graphene containing carbonyl functional groups on the surface at low temperature. After treatment, the conductivity of graphene has increased by more than 6 orders of magnitude. This method can also be used to repair graphene conductive films, making them change from insulators to conductors. Background technique [0002] Graphene, which has been evaluated as the thinnest material in nature in recent years, has a sheet thickness of only about one atom. Its constituent units are carbon atoms with SP 2 bonded hexahedron. Due to its special structure, it has a wide range of applications in composite materials, quantum dots, and thin films. Single-layer graphene is generally produced by strong acid substances, which undergo a violent oxidation reaction on grap...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 孙静王家平高濂
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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