Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS atom cavity chip and preparation method thereof

An atomic cavity and chip technology, which is applied in the field of integrated atomic cavity chips and its preparation, can solve the problems of complex processing technology and low integration of thermally isolated atomic cavity, shorten the heating time, improve the isolation effect, and solve the problems of complex processing technology Effect

Inactive Publication Date: 2012-11-14
BEIHANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Problems solved by the technology of the present invention: Overcoming the deficiencies of the prior art, adopting MEMS processing technology, providing a MEMS atomic cavity chip and its preparation method, solving two key technical problems existing in the MEMS atomic cavity at present, one is the degree of integration The second is the problem of the complex processing technology of the thermally isolated atomic cavity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS atom cavity chip and preparation method thereof
  • MEMS atom cavity chip and preparation method thereof
  • MEMS atom cavity chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Such as figure 1 As shown, it is a structural schematic diagram of the MEMS atomic cavity chip of the present invention, including a radio frequency coil 2, an electrical connection lead 3, two glass substrates 4, a silicon substrate 5, an electrical connection through hole 6, an alkali metal 7, and a cavity space 8. Resistance heating wire 9, thermal isolation through hole 10, thermal isolation ring 11, pad 12, two glass substrates 4 and one silicon substrate 5 are bonded together to form a thermal isolation atomic cavity 1, namely figure 1 The box part indicated in is thermally isolated atomic cavity 1;

[0039] The two glass substrates 4 are identical in structure and symmetrical up and down. There are thermal isolation through holes 10 and electrical connection through holes 6 on the glass substrate 4. The electrical connection through holes 6 are filled with metal nickel, or other electroplatable metals. , such as copper, silver, etc. There are Cr / Au radio freque...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermal conductivityaaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses an MEMS atom cavity chip and a preparation method thereof. The chip comprises two glass substrates and a silicon substrate, heater strips and radio-frequency coils are integrated on the glass substrates, metal leads connecting front faces and reverse faces are processed by laser perforation and plating technology. Atom cavity spaces and thermal insolating rings are integrated on the silicon substrate. The injection of alkalis is finished in an anaerobic box, the injection and bonding of air is finished then, and the injection of high concentration supplementary air is realized. The invention has high integrated level, and realizes on-chip integration of the heater strip, the radio-frequency coil and thermal isolating ring structures. The invention can be used for MEMS atomic gyroscopes besides MEMS atomic clocks and MEMS atom magnetometers.

Description

technical field [0001] The invention belongs to the field of micro-electromechanical system processing, and in particular relates to an integrated atomic cavity chip applicable to MEMS atomic gyroscopes and a preparation method thereof, which can be used for MEMS atomic clocks, MEMS atomic magnetometers and MEMS atomic gyroscopes. Background technique [0002] As an emerging high-tech field, micro-electro-mechanical systems (MEMS) use advanced semiconductor technology to integrate the entire mechanical structure into a chip, and have been widely used in military, biomedical, automotive and other industries. In recent years, with the development of atomic physics, laser diode technology and micro-nano manufacturing technology, a new research field of atomic MEMS has gradually formed. Atomic MEMS devices are characterized by high precision and small size compatibility. The current main devices include MEMS atomic clocks, MEMS atomic magnetometers and MEMS atomic gyroscopes. M...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00B81C3/00
CPCG04F5/145
Inventor 董海峰房建成周斌权万双爱秦杰
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com