Non-annular cavity type semiconductor laser

Abstract

The invention provides a non-annular cavity type semiconductor laser, adopting a non-annular cavity and comprising an upper electrode (8), an upper waveguide layer (9), an active gain region (10), a lower waveguide layer (11), a substrate (12) and a lower electrode (13) which are all non-annular and sequentially connected. The lower electrode (13) of the non-annular cavity type semiconductor laser is formed by welding solder on a copper heat sink, Compared with a non-circular dick cavity type semiconductor laser, the non-annular resonance cavity not only keeps optical orientation output, but also improves the current injection rate by more than 20%, decreases the lasing threshold of a laser device by more than 20%, improves the electro-optic conversion efficiency of the device by 15-20%, improves the optical output rate by 10-15% and overcomes the defects of the conventional structure. The laser can be applied to a semiconductor material system of an III-V group or a semiconductor material system of an II-VI group and can be also applied to organic fluorescent or laser material systems.

Description

Technical field [0001] The invention belongs to the field of semiconductor lasers and relates to a non-circular ring cavity semiconductor laser. Background technique [0002] Disc-shaped (micro) cavity semiconductor lasers are currently one of the most active research topics in the field of optoelectronics. Compared with edge-emitting semiconductor lasers, disc-shaped cavity semiconductor lasers have high quality factors, low lasing thresholds, and easy planar process preparation. The advantages of two-dimensional optical integration, so it has a wide range of application prospects in optical communication, optical interconnection and optical integration, etc., which has aroused people's great interest; the disadvantage of disc cavity semiconductor laser is that the optical output does not have a certain directionality , Along the boundary of the disc 360 degrees. Non-circular disc cavity semiconductor lasers are emerging representatives of this type of disc cavity semiconductor...

AI Technical Summary

Problems solved by technology

However, due to the adoption of this non-disc cavity structure, current injection will be performed on the entire disc-shaped area, while the whispering gallery mode of light only travels near the edge of the disc, and the current in the central part of the disc does not contribute to the optical gain; thus Firstly, the lasing threshold of the laser device will be increased, the electro-optical conversion efficiency of the laser device will be reduced, the temperature rise of the device will be increased, and the optical output power of the device will be reduced.

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