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New method for realizing efficient electrofluorescence and low threshold laser

A luminescent, low-threshold technology, which is applied to the structure of circuits, electrical components, and active regions, can solve the problems of weak monochromaticity of the optical mode, large optical reflection loss, and high threshold current of the device, achieving threshold current reduction, Effects of extended-range, highly efficient low-threshold laser emission

Inactive Publication Date: 2010-05-12
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are great shortcomings in these devices: first, the threshold current of the device is high due to the large optical reflection loss between the particles; second, the disorder of the ZnO particles directly leads to the single optical mode. Weak chromaticity and poor directionality bring great difficulties to practical application

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1, under the conditions of constant vacuum and gas flow in the growth chamber, find the best substrate temperature range to grow high-quality ZnO thin films.

[0026] Using the ZnO heterojunction device structure designed in the present invention, a 30nm MgO dielectric layer and a 300nm non-doped n-ZnO thin film are grown on the p-GaN substrate through P-MBE equipment. The p-GaN substrate was loaded into the sample holder, the RF power was 300W, the temperature of the Zn source was 245°C, the temperature of the Mg source was 280°C, and the flow rate of oxygen was 0.8 sccm. After 30min growth, high-quality MgO thin films were obtained, followed by 2 hours of ZnO thin films.

[0027] Using different growth temperatures A-700°C, B-800°C, C-850°C, three different samples were prepared. The crystal structure was characterized by X-ray diffraction (XRD), and the peak half-width of the diffraction peak (002) was B<C<A. Among them, sample B has the narrowest peak widt...

Embodiment 2

[0030] In Example 2, the growth of a high-quality ZnO thin film was carried out by using different gas flow rates under fixed vacuum and temperature conditions in the growth chamber.

[0031] Using P-MBE equipment, three samples A-0.6 sccm, B-0.8 sccm, C-1.0 sccm were grown under fixed growth chamber vacuum and temperature conditions with different oxygen flow rates, and the growth time was 120 minutes.

[0032]The crystal structure is characterized by X-ray diffraction spectrum (XRD), and the half-maximum width of the diffraction peak (002) is B<C<A. Among them, the half-maximum width of the diffraction peak (002) of sample B is narrow (<0.2°), indicating that the ZnO film grown under the condition of 0.8 sccm has obvious c-axis preferred orientation and good crystal quality.

[0033] The surface morphology of the sample was characterized by field emission electron microscopy (SEM), and the sample had good crystalline quality. The film surface of sample B is flat, the crysta...

Embodiment 3

[0035] Example 3, under constant pressure, oxygen flow and temperature conditions, MgO dielectric layers (20-50nm) with different thicknesses were used to prepare heterojunction devices.

[0036] Using P-MBE equipment, three samples A-20nm, B-30nm, and C-40nm were prepared with different MgO dielectric layer thicknesses under fixed growth chamber vacuum, oxygen flow and temperature conditions.

[0037] The three samples were characterized by the Hall tester, among which the reverse leakage current of sample B was the smallest, the rectification characteristic was the best, and the turn-on voltage was 7V. It shows that the effect of using a 30nm thick MgO film is the best, and the device has the best P-N junction effect.

[0038] Under the drive of forward current, the B sample obtained a strong ultraviolet luminescence, and the main peak was around 390nm, realizing a good ultraviolet light-emitting diode. At the same time, the variable current test was carried out on the devi...

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Abstract

The invention belongs to the field of semiconductor optoelectronic materials and device technology, and relates to a new method for realizing efficient electrofluorescence and low threshold laser. The method comprises the following steps: utilizing a p-type material and an n-type material which have the same crystal structure and similar lattice constants, and taking the p-type material as a hole source of the n-type material; through the design of an energy band, regulating an energy band structure between the p-type material and the n-type material by adopting a dielectric layer to control the transport property of a current carrier, and accumulating electrons in an n-type material layer to form a hole and injecting electrons to the n-type material layer from the p-type material so as to realize the efficient electrofluorescence and low-threshold later emission in the n-type material. The new method for realizing the efficient electrofluorescence and the low threshold laser is suitable for heterojunction growth and device preparation of II-VI group semiconductor material, III-V group semiconductor material and other semiconductor materials with wide band gap, is a simple and practicable method for realizing semiconductor luminescence, expands the range for preparing high-efficiency luminescent devices greatly, and opens a new way for the research and the preparation of the luminescent devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic materials and device technology, and relates to a new method for realizing high-efficiency electroluminescence and low-threshold laser. Background technique [0002] Zinc oxide is an important wide-bandgap semiconductor material with an energy gap width of about 3.37 eV at room temperature and an exciton binding energy as high as 60 meV. Due to its large exciton binding energy, it is expected to achieve high-efficiency blue-violet emission and low-threshold lasing at room temperature or even higher temperatures. Therefore, ZnO has become the frontier and hotspot of international optoelectronics research. In addition, compared with other wide-bandgap materials such as ZnSe, GaN, and SiC, ZnO has the advantages of high chemical and thermal stability, better resistance to radiation damage, lower growth temperature, and suitability for long-life devices. . [0003] At present, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/30
Inventor 朱海单崇新张振中李炳辉张吉英申德振范希武
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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