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Method for homogeneous endotaxy repair and homogeneous epitaxial growth of diamond single crystal

A diamond single crystal, homoepitaxial technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of yellow color, expensive pressure equipment, and the influence of synthetic diamond single crystal size, etc., to achieve low operating costs, Increases clarity and cleanliness for milder conditions

Inactive Publication Date: 2010-04-21
宋建华
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

People have invented a variety of synthetic diamond methods, such as synthesizing single crystal diamond under the condition of more than tens of thousands of atmospheric pressure. The pressure equipment for this kind of synthetic diamond single crystal is relatively expensive, and the single crystal size of synthetic diamond is affected. Although the size of nitrogen-containing diamond synthesized by high pressure can reach 1cm in diameter, it is affected by impurities and appears yellow

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1 adopts 4 * 4 * 1 millimeter, the natural diamond single crystal (the crystal plane of 4 * 4 is 100 orientation) of weight about 0.28 carats is used as crystal seed, this part of natural diamond single crystal has fissures and cracks, part is pale Yellow containing impurities. A DC jet plasma device with a power of 100kw and a deposition area of ​​300 square centimeters is used as the vapor deposition device, and metal molybdenum or tungsten is used as the substrate material in the device. Vacuumize and heat up the DC jet plasma equipment, keep the internal temperature at 1200-1300°C, maintain the vacuum degree of the equipment at 1000-2000Pa, and control the flow rate of argon gas carrier to 20 liters / minute, the flow rate of hydrogen gas carrier to 20 liters / minute, methane CH 4 or ethane C 2 h 6 The carrier flow rate is within the range of 120-200 ml / min, and the homogeneous epitaxy repair and homogeneous epitaxy growth control are performed, and the co...

Embodiment 2

[0021] Example 2 uses a high-temperature and high-pressure synthetic diamond single crystal with a diameter of 6*6*1.5 and a weight of about 0.95 carats (the crystal plane of 6*6 is 110 orientation) as a seed crystal, and this part of the high-temperature and high-pressure synthetic diamond single crystal contains nitrogen impurities Pale yellow in color. A microwave plasma device with a power of 50kw and a deposition area of ​​100 square centimeters is used as a vapor deposition device, and silicon or quartz is used as a substrate material in the device. Vacuumize and heat up the microwave plasma equipment, keep the internal temperature at 1400-1500°C, maintain the vacuum degree of the equipment at 10-100Pa, and control the flow rate of argon carrier to 40 liters / minute, the flow rate of hydrogen carrier to 50 liters / minute, and the flow rate of liquefied gas carrier In the range of 800-900 ml / min, perform homogeneous epitaxial repair and epitaxial growth, keep this condition...

Embodiment 3

[0024] Embodiment 3 uses a chemical vapor deposition diamond single crystal with a diameter of about 2*2*1 mm and a weight of about 0.07 carats (the crystal plane of 2*2 is 110 orientation) as a seed crystal. The chemical vapor deposition diamond single crystal has Fine voids and carbon impurities. A hot wire plasma device with a power of 100kw and a deposition area of ​​300 square centimeters is used as the vapor deposition device, and silicon is used as the substrate material in the device. Vacuumize and heat up the hot wire plasma equipment, keep the internal temperature at 1000-1000°C, keep the vacuum degree of the equipment at 300-400Pa, and control the flow rate of argon gas carrier at 6-10 liters / minute, and the flow rate of hydrogen gas carrier at 10-20 liters / minute Minutes, ethanol or methanol carrier flow within the range of 40-60 ml / min, perform homogeneous internal extension repair, maintain this condition for 24-30 hours, then slowly cool down and adjust the vacu...

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Abstract

The invention relates to a method for homogeneous endotaxy repair and homogeneous epitaxial growth of a diamond single crystal. The method is characterized by comprising the step of carrying out endotaxy repair and epitaxial growth of vapor deposition at a temperature between 700 DEG C and 2,000 DEG C by adopting CVD chemical vapor deposition diamond equipment and taking the diamond single crystal as a seed crystal. The method can simultaneously realize homogeneous endotaxy repair and homogeneous epitaxial growth of the diamond single crystal, can be used for repairing the inside cavity, cracks and other defects of the traditional diamond, removing the internal impurities and color of the diamond and increasing the transparency and the cleanliness and can carry out homogeneous epitaxial growth in various orientations of the outer surface of the diamond single crystal to obtain a larger pure diamond single crystal. The method has mild realization condition and low running cost, and can be used for repair and growth of seed crystals of artificial and natural diamond single crystal.

Description

technical field [0001] The invention belongs to diamond vapor deposition technology, and in particular relates to a method for homogeneous epitaxial repair and homogeneous epitaxial growth of internal defects of diamond single crystals for repairing and growing diamond single crystals using diamond single crystals as crystal seeds. Background technique [0002] As the most popular jewelry decoration material, diamond is becoming more and more scarce. Because a large number of diamonds with internal defects cannot be used as jewelry materials, they are devalued and used as industrial materials. Moreover, gem-quality large-size diamonds are becoming more and more scarce. People have invented a variety of synthetic diamond methods, such as synthesizing single crystal diamond under the condition of more than tens of thousands of atmospheric pressure. The pressure equipment for this kind of synthetic diamond single crystal is relatively expensive, and the single crystal size of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/04C30B25/00
Inventor 宋建华
Owner 宋建华
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