DC-to-DC converter comprising a reconfigurable capacitor unit

A technology of DC converter and capacitor unit, which is applied in the direction of electrical components, electrical solid devices, and conversion equipment without intermediate conversion to AC, to achieve the effect of reducing process cost and size

Active Publication Date: 2010-03-24
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, trench capacitors in DRAM applications need to refresh the amount of stored charge several times per second, which is critical in applications involving high-voltage or high-frequency signals in the voltage range of tens of volts, such as radio frequency (RF) signals. unacceptable

Method used

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  • DC-to-DC converter comprising a reconfigurable capacitor unit
  • DC-to-DC converter comprising a reconfigurable capacitor unit
  • DC-to-DC converter comprising a reconfigurable capacitor unit

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Embodiment Construction

[0088] figure 1 is a graph showing capacitance density calculations that can be achieved by using multilayer stacked trench capacitors. In the illustration, in nF / mm 2 The capacitance density in units of is plotted as a function of the radius of the columnar trench where the trench capacitors are formed in microns. Three curves A, B and C as shown in the figure were calculated for three different material combinations and treatments with dielectric breakdown field values ​​varying by a factor of two. The breakdown field is considered to be inversely proportional to the square root of the relative permittivity of the dielectric material used for the dielectric layer of the trench capacitor. The constant breakdown voltage of the capacitor of 30V was used as a limit for the combination and processing of all three materials. An additional constraint is used to determine the thickness of each metal layer for each material composition, namely the constraint that keeps the Q facto...

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Abstract

The present invention relates to a configurable trench multi-capacitor device comprising a trench in a semiconductor substrate. The trench has a lateral extension exceeding 10 micrometer and a trench filling includes a number of at least four electrically conductive capacitor-electrode layers. A switching unit is provided that comprises a plurality of switching elements electrically interconnected between different capacitor-electrode layers of the trench filling. A control unit is connected with the switching unit and configured to generate and provide to the switching unit respective control signals for forming a respective one of a plurality of multi-capacitor configurations using the capacitor-electrode layers of the trench filling.

Description

technical field [0001] The invention relates to a DC-DC converter. [0002] The disclosures of EP05110488.3, ​​PCT / IB / 2006 / 054063 (PH001923EP1) and EP06113955.6 (PH005924EP1) are incorporated by reference in their entirety into this application. Background technique [0003] It is well known that in a (capacitive) DC-DC converter the ratio of the input voltage to the output voltage depends on the capacitance of the converter. [0004] Furthermore, it is well known that the capacitance of a capacitive device is directly proportional to the area of ​​the capacitor electrodes, the dielectric constant of the dielectric material between the capacitor electrodes, and inversely proportional to the distance between the capacitor electrodes. [0005] Trench capacitors are widely used to increase the electrode area of ​​capacitors included in electronic devices formed from integrated circuits on semiconductor chips. In a trench capacitor, its electrodes are formed from a conductive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07H01L27/08
CPCH02M3/07H01L27/0805
Inventor 约翰·H·克洛特威克亨德里克·J·贝格弗尔德弗雷迪·罗泽博姆德克·雷夫曼亚普·鲁伊格罗克
Owner NXP BV
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