Insulation system for polycrystalline silicon ingot furnace
A polysilicon ingot furnace and heat preservation system technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of high cost and large ingot thermal stress, so as to improve product quality, save energy and increase productivity Effect
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Embodiment 1
[0018] Embodiment 1. A 275 kg polysilicon ingot was melted using a hard graphite carbon felt material. After 50 hours, the total power consumption was 4000 degrees. Using the heat preservation system of the present invention, smelting 275kg polysilicon ingots takes 70 hours and consumes 3000 degrees of electricity in total. No internal stress relief treatment is done before subsequent slicing. 8,000 qualified silicon wafers are cut with hard graphite carbon felt material, and 9,000 qualified silicon wafers can be cut with this thermal insulation system.
Embodiment 2
[0019] Embodiment 2. Using hard graphite carbon felt material, smelting 450kg polysilicon ingot, after 90 hours, a total power consumption of 8000 degrees. Using this heat preservation system, smelting 450kg polysilicon ingots took 120 hours and consumed a total of 5000 degrees of electricity. No internal stress relief treatment is done before the subsequent slicing. 16,000 qualified silicon wafers are cut with hard graphite carbon felt material, and 18,000 qualified silicon wafers can be cut with this heat preservation system.
Embodiment 3
[0020] Example 3. Using this heat preservation system, 800 kg of polysilicon ingots were melted for 240 hours, with a total power consumption of 6500 kWh.
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