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Method for preparing modified titanium dioxide doped thin film

A titanium dioxide and thin film technology, which is applied in the field of preparation of modified titanium dioxide thin films, can solve the problems of poor doping effect, difficulty in doping and modification of titanium dioxide thin films, weak bonding force between the thin film and the substrate, etc., and achieves easy mastery, doping modification Ease of use and the effect of widening the scope of application

Inactive Publication Date: 2011-07-27
HARBIN INST OF TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of difficult doping and modification of the existing titanium dioxide film, poor doping effect, and weak bonding force between the film and the substrate obtained by the existing layer-by-layer self-assembly technology. The present invention provides a doping modified Preparation method of permanent titanium dioxide thin film

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  • Method for preparing modified titanium dioxide doped thin film
  • Method for preparing modified titanium dioxide doped thin film
  • Method for preparing modified titanium dioxide doped thin film

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specific Embodiment approach 1

[0026] Specific embodiment one: the preparation method of the doped modified titanium dioxide thin film of this embodiment is realized through the following steps:

[0027] Step 1, preparation of the modified titanium dioxide pre-film:

[0028] a. The quartz glass substrate is degreased and decontaminated, and then cleaned with deionized water to carry out protonization pretreatment on the quartz glass substrate;

[0029] b. Place the quartz glass substrate treated in step a in a 3-aminopropyltrimethoxysilane (SiRN) solution with a mass concentration of 5% to 15%, soak for 20 to 40 minutes, then wash with ethanol, and then Dry at 70℃~80℃ for 1~1.5h;

[0030] c. Place the quartz glass substrate treated in step b in a 5% di(2-hydroxypropionic acid)diammonium titanium hydroxide (TALH) solution, soak it for 10-30min, take it out and use it Wash with deionized water, dry naturally, then place in 2mmol / L polyethyleneimine (PEI), soak for 10-30min, take it out, wash with deionized wa...

specific Embodiment approach 2

[0040] Embodiment 2: This embodiment differs from Embodiment 1 in that the quartz glass substrate in step a of step 1 can also be replaced by an ITO conductive glass substrate or a single crystal silicon wafer substrate. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0041] Specific embodiment three: what this embodiment is different from specific embodiment one or two is that the degreasing and decontamination treatment in the a step of step one is specifically: mix and prepare Piranha ( Piranha) solution, the substrate was placed in the Piranha solution at a temperature of 70° C., soaked for 20 minutes, wherein the volume ratio of concentrated sulfuric acid and hydrogen peroxide solution was 7:3. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

The invention relates to a method for preparing a modified titanium dioxide doped thin film. The invention solves such problems of existing titanium dioxide thin films as difficult doping modification, poor doping effect and poor binding force between the thin film obtained by the existing layer-by-layer self-assembly technique and a substrate. The method comprises the following steps: preparing an early modified titanium dioxide doped thin film by the layer-by-layer self-assembly technique, and then obtaining the modified titanium dioxide doped thin film by heat treatment. The method has advantages of stable and reliable process, simple equipment, easy operation and realizable doping modification. The titanium dioxide thin film obtained by the method has good doping modification effect, band gap of the titanium dioxide thin film decreases to 2.8eV, and the thin film is bound tightly to the substrate by alkylation treatment. The modified titanium dioxide doped thin film can be appliedto photocatalytic water decomposition for hydrogen production.

Description

technical field [0001] The invention relates to a preparation method of a modified titanium dioxide film. Background technique [0002] Titanium dioxide has a high energy band gap and is only responsive to ultraviolet light, which limits the practical application of titanium dioxide in the field of photocatalysis. At the same time, it is difficult to separate and recycle the powder catalyst after the reaction, and it is easy to cause secondary pollution and other problems, so people put forward new requirements for modification and curing of titanium dioxide photocatalysts. [0003] At present, the modification methods of titanium dioxide thin films mainly include sensitization and doping. Due to the high cost of the sensitization process and the difficulty of obtaining a sensitized film with uniform thickness on large-area devices, doping becomes titanium dioxide modified in practical applications. primary means. The traditional preparation methods of titanium dioxide thi...

Claims

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Application Information

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IPC IPC(8): C03C17/00C03C17/22C04B41/45C04B41/50B01J23/30B01J21/06B01J23/34C01B3/06
CPCY02E60/36
Inventor 姜兆华李春香姚忠平贾方舟姜艳丽
Owner HARBIN INST OF TECH
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