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Large single crystal diamonds

A single crystal diamond and diamond technology, applied in the field of diamond material preparation, can solve the problems of high cost and complicated methods, and achieve the effect of improving spatial uniformity

Active Publication Date: 2010-02-24
ELEMENT SIX LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Thus, although 4,836,881 addresses some of the problems encountered when using large seeds, the proposed method is complex and expensive

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0188] A set of 40 seeds prepared from HPHT diamond was selected. The seed has a polished upper (growth) surface (R measured using a stylus profilometer of less than 100 nm a ) and laser cutting from larger sheets using a Nd:YAG laser. The seeds had dimensions of 5.0mm x 0.58mm x 0.58mm. The geometry of the seed was such that the growth surface was within 10° of (001) and the seed edge was within 10° of the direction.

[0189] Select seeds based on the following criteria:

[0190] ●Inclusion content (no inclusions with a size greater than 0.2mm, and an average of less than 1 inclusion per linear millimeter of the maximum edge length)

[0191] ●No cracks (observed under 10×)

[0192] ●Surface finish (R a <80nm)

[0193] ●>60% single sector growth habit

[0194] • Dimension Tolerance - All dimensions are within 0.1mm of the required dimensions.

[0195] use as Figure 1a The layout shown has the seeds arranged on a seed carrier with a spacing of 5.75mm between the seed...

Embodiment 2

[0204] A set of 59 seeds prepared from HPHT diamond was selected. The seed has a polished upper (growth) surface (R measured with a stylus profilometer of less than 100 nm a ) and laser cut from larger sheets using a Nd:YAG laser. The seed has dimensions of 3.5 mm x 1.0 mm x 1.0 mm. The geometry of the seed was such that the growth surface was within 10° of (001), and the edge of the seed was within 10° of the direction.

[0205] Select seeds based on the following criteria:

[0206] ●Inclusion content (no inclusions with a size greater than 0.2mm, and an average of less than 1 inclusion per linear millimeter of the maximum edge length)

[0207] ●No cracks (observed at 10× magnification)

[0208] ●Surface finish (Ra <80nm)

[0209] ●>60% single sector growth habit

[0210] • Dimension Tolerance - All dimensions are within 0.1mm of the required dimensions.

[0211] use as Figure 1a The layout shown arranges the seeds on a seed carrier with about 5.75mm spacing between...

Embodiment 3

[0224] A set of 34 seeds prepared from HPHT diamond was selected. The seed has a polished upper (growth) surface (R measured with a stylus profilometer of less than 100 nm a ) and laser cut from larger sheets using a Nd:YAG laser. The seed crystal has dimensions of 7.0 mm x 1.0 mm x 1.0 mm. The geometry of the seed was such that the growth surface was within 10° of (001), and the edge of the seed was within 10° of the direction.

[0225] Select seeds based on the following criteria:

[0226] ●Inclusion content (no inclusions with a size greater than 0.2mm, and an average of less than 1 inclusion per linear millimeter of the maximum edge length)

[0227] ●No cracks (observed at 10× magnification)

[0228] ●Surface finish (R a <80nm)

[0229] ●>60% single sector growth habit

[0230] • Dimension Tolerance - All dimensions are within 0.1mm of the required dimensions.

[0231] use as Figure 1a The layout shown arranges the seeds on a seed carrier with about 5.75mm spaci...

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Abstract

The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ration of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described, wherein the longest dimension of the growth surface substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Description

technical field [0001] The present invention relates to a method of preparing diamond material. In particular, the invention relates to large single crystal diamonds and methods of making them using high pressure high temperature (HPHT) methods. Background technique [0002] The synthesis of diamond by the temperature gradient HPHT method is well known in the art. [0003] Conventional methods of diamond synthesis can produce single crystal diamonds up to several carats (maximum lateral dimension about 6 mm), although some exceptionally large diamonds are reported in R.C. Burns et al., Diamond and Related Materials, 8 (1999), 1433-1437 (stone), but is generally not available due to the added complexity in preparation. [0004] For a range of products from synthetic gem-quality diamonds to substrates for epitaxial growth, maximizing the overall volume fraction of each crystal available for the finished product is an important challenge in diamond synthesis. Furthermore, fo...

Claims

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Application Information

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IPC IPC(8): B01J3/06
CPCB01J2203/068B01J2203/0655B01J2203/062C30B25/18B01J3/062B01J2203/061Y10T428/24942Y10T428/30
Inventor C·N·多德格R·A·斯皮茨
Owner ELEMENT SIX LTD
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