Plasma-processing device and method of manufacturing adhesion-preventing member

A plasma and processing device technology, applied in the direction of plasma, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as the impact of manufacturing yield, achieve the effects of reducing manufacturing cost, improving manufacturing yield, and suppressing characteristic changes

Active Publication Date: 2013-07-03
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, when the degree of contamination becomes high, the characteristics of the devices formed on the substrate will change, which will affect the manufacturing yield.

Method used

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  • Plasma-processing device and method of manufacturing adhesion-preventing member
  • Plasma-processing device and method of manufacturing adhesion-preventing member
  • Plasma-processing device and method of manufacturing adhesion-preventing member

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Experimental program
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Effect test

no. 1 approach

[0052] figure 1 It is a schematic configuration diagram of an etching apparatus (plasma processing apparatus) 1 of the present invention. The etching apparatus 1 has a processing chamber 10, an anti-adhesion member 20, a plasma generating device 30, a bias generating device 40, a first quartz plate 15, a heating device 51, a supporting member 52, a second quartz plate 53, an air intake device 60, Exhaust equipment 70 and cooling device 80 . The plasma generation device 30 has a first electrode 31 , a permanent magnet 32 ​​, an antenna 33 and a first high-frequency power source 34 . The bias generating device has a second electrode 41 and a second high-frequency power source 42 .

[0053] The processing chamber 10 is formed in a cylindrical shape, has an opening 10c in the top wall 10a, and has an opening 10d in the bottom wall 10b. On the outside of the ceiling wall 10 a of the processing chamber 10 , a first quartz plate 15 is placed to cover the opening 10 c. A first ele...

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Abstract

A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

Description

technical field [0001] The present invention relates to a plasma processing device and a method for manufacturing an anti-adhesion member. [0002] This application takes Japanese Patent Application No. 2007-132631 and Japanese Patent Application No. 2007-146753 as basic applications, and incorporates the contents thereof. Background technique [0003] Etching using a plasma processing apparatus is performed by causing a reactive gas excited into a plasma state to collide with a structure formed on a substrate. During the etching process, products such as particles of the structure combined with the reaction gas or simple particles of the structure fly out from the structure. An anti-adhesion plate is arranged between them. [0004] As a material of the antiadhesive plate, a material obtained by subjecting the surface of an aluminum alloy to an aluminum oxide film treatment process, etc. are used (for example, refer to Patent Document 1). Impurities (products) such as mag...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH01J37/32467H01J37/32568H01J37/32009H01J37/321H01L21/3065H05H1/46
Inventor 小风丰植田昌久远藤光广邹红罡宫崎俊也酒田现示中村敏幸
Owner ULVAC INC
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