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Bulk acoustic wave sensor with high stability

A high-stability, sensor-based technology, applied in the direction of analyzing fluids using sound waves/ultrasonic waves/infrasonic waves, can solve problems such as limiting the application range of body wave sensors and poor stability, and achieve good detection stability, simple stability, and high The effect of stability

Inactive Publication Date: 2010-02-10
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

During the experiment, it was found that in this type of sensor device, the formation of organic chemical sensitive film is easily affected by many factors such as temperature, humidity, oxidation, static electricity and pressure, and the stability is not good, which limits the existing body wave sensor. scope of application

Method used

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  • Bulk acoustic wave sensor with high stability
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Embodiment Construction

[0017] A high-stability bulk acoustic wave sensor of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0018] figure 1 It is a top view of an embodiment of a high-stability bulk acoustic wave sensor of the present invention, figure 2 It is a high stability bulk acoustic wave sensor of the present invention figure 1 A cross-sectional view of the embodiment shown. like figure 1 as well as figure 2 As shown, a high-stability bulk acoustic wave sensor of the present invention includes: a piezoelectric substrate 3, deposited on the piezoelectric substrate 3, lower surface electrodes 1, 2, and a sensitive sensor covering the upper surface electrode 1. Membrane 4, wherein the sensitive membrane 4 is a nano-structured sensitive material layer, and the sound wave is transmitted from one side of the piezoelectric crystal to the other and propagates inside the crystal. When the loaded measured object rea...

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Abstract

The invention provides a bulk acoustic wave sensor with high stability, which comprises a piezoelectric substrate, an upper surface electrode and a lower surface electrode deposited on the upper surface and the lower surface of the piezoelectric substrate and a sensitive membrane covered on the upper surface electrode, and the bulk acoustic wave sensor is characterized in that the sensitive membrane adopts a semiconductor type sensitive material. Wherein, the sensor adopts the bulk wave mode, the sensitive membrane adopts the semiconductor type sensitive material, and acoustic waves are transferred from one surface of a piezoelectric crystal to the other surface and spread in the crystal. When a loaded object to be tested reacts with the sensitive membrane, the features of the acoustic waves are changed, and a conclusion of the features of the object to be tested is obtained by detecting the changes. The bulk acoustic wave sensor utilizes the mature design technology of the bulk wave sensor and the research results of the semiconductor type sensitive material and fully combines the sensitivity of the bulk wave sensor with the stability of the semiconductor type sensitive material,thereby realizing the practical bulk wave sensor with high stability; and compared with the existing surface acoustic wave sensor, the processing technology is simpler.

Description

technical field [0001] The invention relates to a high-stability bulk acoustic wave sensor, in particular to a bulk wave sensor using a semiconductor-type sensitive material as a sensitive film. Background technique [0002] Since 1964, the first gas sensor was developed by Wickens and Hatman using the oxidation-reduction reaction of gas on the electrode. In 1982, Persaud of the University of Warwick in the United Kingdom proposed the structure of using a gas sensor to simulate the animal olfactory system. Sensors develop rapidly and are used in various occasions. Gas sensors mainly include semiconductor sensors (resistive and non-resistive) (Sensor World, 2001, "Research Progress of Several Common Gas Sensors"). Existing gas detection devices mainly use the changes in resistance, capacitance and current caused by the contact between the gas-sensitive film and the gas to be measured to determine the gas concentration. At the same time, there are a lot of researches on vari...

Claims

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Application Information

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IPC IPC(8): G01N29/02
Inventor 程利娜李红浪何世堂
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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