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Operating method for realizing multi-bit data storage of ferroelectric memory

A technology of ferroelectric memory and operation method, which is applied in the field of microelectronics, can solve the problems of low resource utilization rate and low storage efficiency, and achieve the effects of increasing storage density, reducing production cost, and simple and easy design

Inactive Publication Date: 2010-01-06
FUDAN UNIV
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Problems solved by technology

[0004] Traditional ferroelectric memory cells generally only use a pair of positive and negative pulse voltages with the same absolute value to generate a pair of positive and negative polarization values ​​to define the "0" and "1" states. Obtain a single state value, that is, only one bit of data storage can be realized, the resource utilization rate is low, and the storage efficiency is low

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  • Operating method for realizing multi-bit data storage of ferroelectric memory
  • Operating method for realizing multi-bit data storage of ferroelectric memory
  • Operating method for realizing multi-bit data storage of ferroelectric memory

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Embodiment Construction

[0043] The operation method of the multi-bit data storage of the ferroelectric memory of the present invention is specifically described below in conjunction with the accompanying drawings:

[0044] First, test the hysteresis loop of the ferroelectric film capacitor with an applied voltage. When the applied voltage continues, there will be a saturation polarization P sat 00; when the external positive and negative voltages are eliminated, the two residual polarization values ​​01 and 02 can be obtained respectively, such as figure 1 shown.

[0045] In the same ferroelectric film capacitor, different values ​​of remanent polarization can be obtained under different positive and negative voltages; in addition, when the absolute values ​​of positive and negative pulse voltages are equal, the obtained remanent polarization values ​​are almost equal, And as figure 2 shown.

[0046] The ferroelectric memory unit of the 1T1C structure adopted in the embodiment of the present inve...

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Abstract

The invention provides an operating method for realizing multi-bit data storage of a ferroelectric memory, belonging to the technical field of micro-electronics. The method comprises the following steps: in a storage unit of a ferroelectric memory, leading a ferroelectric film to correspondingly generate residual polarization intensity with different magnitudes by additionally increasing different writing pulse voltages and correspondingly defining the residual polarization intensity into different storage states; and reading all the corresponding storage states by a fixed additionally increased right-reading voltage, thereby realizing the multi-bit storage in a single storage unit. The operating method for realizing multi-bit data storage enables a multi-bit storage device to greatly improve the storage density and greatly reduce the production cost.

Description

technical field [0001] The invention provides an operation method for realizing multi-bit data storage of a ferroelectric memory, which belongs to the technical field of microelectronics. Background technique [0002] In the semiconductor market, memory occupies an extremely important position. With the gradual popularization of portable electronic devices, the market of non-volatile memory is also increasing. At present, Flash accounts for 90% of the market of non-volatile memory. However, with the advancement of semiconductor technology, Flash has encountered more and more technical bottlenecks, and the tunnel oxide layer cannot be thinned indefinitely with the development of integrated circuit technology. The idea to solve this problem is to develop a new generation of non-volatile memory, mainly including magnetic memory (MRAM), phase change memory (PCM), resistive memory (ReRAM) and ferroelectric memory (FeRAM), among which ferroelectric memory is the first to be comme...

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Application Information

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IPC IPC(8): G11C7/00G11C11/22
CPCG11C11/5657
Inventor 陈志辉江安全沈臻魁万海军
Owner FUDAN UNIV
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