Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving degree of graphitization of graphite material

A technology of graphitization degree and graphite material, applied in the field of structural modification of inorganic carbon materials, can solve the problems of large spacing between graphite wafers, small average crystallite size, complex processing equipment, etc. Large, simple handling equipment

Inactive Publication Date: 2009-12-23
TIANJIN POLYTECHNIC UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, natural graphite and some artificial graphite have the following problems: due to the large distance between graphite wafers and the small average size of crystallites, the degree of graphitization is relatively low, which affects the application range of graphite
At present, the methods used to improve the degree of graphitization of graphite materials mainly include chemical methods and high-temperature aeration methods, but both methods have disadvantages such as complex processing equipment, high cost, and environmental pollution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving degree of graphitization of graphite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0010] Put the graphite powder with a low degree of graphitization into a glass bottle at room temperature, and then place the glass bottle in 60 In the γ-ray irradiation room of Co, the γ-ray irradiation dose rate is 6.0×10 3 Gy / h, the irradiation dose is 2×10 6 The graphite material was irradiated with γ-rays under the condition of Gy, and the irradiation time was 340h, and the degree of graphitization increased from 75% to 81%.

Embodiment 2

[0012] Put the graphite powder with a low degree of graphitization into a glass bottle at room temperature, and then place the glass bottle in 60 In the γ-ray irradiation room of Co, the γ-ray irradiation dose rate is 3.6×10 3 Gy / h, the irradiation dose is 1×10 6 The graphite material was irradiated with γ-rays under the condition of Gy, and the irradiation time was 278h, and the degree of graphitization increased from 75% to 79%.

Embodiment 3

[0014] Put the graphite powder with a low degree of graphitization into a glass bottle at room temperature, and then place the glass bottle in 60 In the γ-ray irradiation room of Co, the γ-ray irradiation dose rate is 0.6×10 3 Gy / h, the irradiation dose is 0.6×10 6 Under the condition of Gy, the graphite material is irradiated with γ-rays, and the irradiation time is 1×10 3 h, the degree of graphitization increased from 75% to 78%.

[0015] A small amount of irradiated graphite powder in Example 1 was taken for X-ray diffraction (XRD) analysis, and compared with graphite powder not irradiated. Through X-ray diffraction analysis, it is found that the graphite wafer spacing of graphite powder is reduced from 0.33756nm before irradiation treatment to 0.33706nm after irradiation treatment. According to the formula for calculating the degree of graphitization proposed by Maire and Mering, the graphite powder The degree of graphitization increases from 74.88% before irradiation t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

he invention relates to a method for improving degree of graphitization of graphite material, T comprising: the graphite material is placed inside a gamma ray radiation source chamber of Co and processed by gamma ray radiation under the conditions that the gamma ray radiation dose rate is 0.6*10Gy / h-6*10Gy / h, and the irradiation dose is 1*10Gy-6*10Gy. The method for improving the degree of graphitization of the graphite material utilizes the characteristics of high energy and strong penetrating power of gamma ray particles to initiate active points inside the graphite material, and leads the active points to react with medium around the material; meanwhile, the energy provided by the gamma ray is utilized to generate carbon free radicals at the defect part inside the graphite material, and stabler chemical bond can be formed among the carbon free radicals, thus the structure at the defect part inside the graphite material is rearranged to form stabler structure, the distance between graphite wafers becomes smaller and smaller, the microcrystal size in enlarged, and the degree of graphitization is improved.

Description

technical field [0001] The invention belongs to the technical field of structural modification of inorganic carbon materials, in particular to a method for improving the degree of graphitization of graphite materials. Background technique [0002] Graphite is a non-metallic solid material mainly composed of carbon. Due to its excellent electrical conductivity, thermal conductivity, high temperature resistance, lubricity and chemical stability, it is widely used in metallurgy, machinery, petroleum, chemical industry, nuclear industry, It is widely used in national defense and other fields. However, natural graphite and some artificial graphite have the following problems: due to the large distance between graphite wafers and the small average size of crystallites, the degree of graphitization is relatively low, which affects the scope of application of graphite. At present, the methods used to improve the degree of graphitization of graphite materials mainly include chemical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 徐志伟陈光伟陈利孙颖
Owner TIANJIN POLYTECHNIC UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com