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Preparation method of composite lead titanate ferroelectric thin film having high ferroelectric property

A composite lead titanate and ferroelectric thin film technology, which is applied to surface coating liquid devices, pretreated surfaces, layered products, etc., can solve problems such as ferroelectric performance degradation, interface defects, and electrode interdiffusion, and achieve Low cost, uniform size, and the effect of improving ferroelectric performance

Inactive Publication Date: 2009-12-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the lead titanate-based thin film prepared by the existing method is easy to interdiffused with the electrode during the crystallization process, and defects are generated at the interface, which leads to the decline of ferroelectric performance, and provides a high-iron Preparation method of composite lead titanate-based ferroelectric film with electrical properties

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  • Preparation method of composite lead titanate ferroelectric thin film having high ferroelectric property
  • Preparation method of composite lead titanate ferroelectric thin film having high ferroelectric property
  • Preparation method of composite lead titanate ferroelectric thin film having high ferroelectric property

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specific Embodiment approach 1

[0010] Specific Embodiment 1: The method for preparing a composite lead titanate-based ferroelectric film with high ferroelectric properties in this embodiment is realized by the following steps: 1. Deposit a layer of lead-lanthanum-calcium-titanate-based ferroelectric film with a thickness of 1-10 nm on the substrate 2. Deposit a layer of lead titanate ferroelectric film with a thickness of 200-1000nm on the lead titanate lanthanum-calcium series ferroelectric film, and then heat-treat it at a temperature of 550-700°C for 2-5 minutes to obtain high-iron ferroelectric film. Composite lead titanate-based ferroelectric thin film with electrical properties; wherein the molecular formula of the lead titanate lanthanum calcium series ferroelectric thin film in step one is (Pb 1-x-y La x Ca y ) Ti 1-x / 4 o 3 , where 0≤X≤0.24, 0≤Y≤0.24.

[0011] The raw materials used in this embodiment are all commercially available.

specific Embodiment approach 2

[0012] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the substrate in step 1 is Pt / Ti / SiO 2 / Si substrate. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0013] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 1, 0.10

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Abstract

A preparation method of a composite lead titanate ferroelectric thin film having high ferroelectric property is disclosed, which relates to a preparation method of the lead titanate ferroelectric thin film and which solves the problems that the lead titanate thin film prepared by the prior art is liable to mutually diffuse with electrodes in the process of crystallization and generates defects at interface so as to result in decreased ferroelectric property. The preparation method comprises the following steps: 1. lanthanum and calcium modified lead titanate ferroelectric thin film is precipitated on a substrate; and 2. the lead titanate ferroelectric thin film is precipitated on the lanthanum and calcium modified lead titanate ferroelectric thin film and then heat treatment is proceeded to obtain the composite lead titanate ferroelectric thin film having high ferroelectric property. In the process of preparing the invention, a discontinuous island structure is formed on an intermediate interface layer of the substrate, increasing nuclci-formation particles of the lead titanate ferroelectric thin film to implement polarization reversal of the ferroelectric thin film more easily and greatly improve the ferroelectric property. The invention is simple in process and apparatuses, inexpensive in used raw materials, low in cost, easy for the integration of devices, and suitable for industrialized generation.

Description

technical field [0001] The invention relates to a preparation method of a lead titanate-based ferroelectric thin film. Background technique [0002] In recent years, ferroelectric ceramics and their thin film materials, especially lead-based ferroelectric thin films, have been widely used in the fields of microelectronics and optoelectronics, especially high-capacity Memory and uncooled infrared detectors have broad application prospects. Since the 1990s, the research on this kind of ferroelectric thin film materials has been a frontier and hot topic at home and abroad. Great progress has been made in the preparation of ferroelectric thin film materials and devices. As a ferroelectric material, lead titanate (PT)-based thin film has the characteristics of spontaneous polarization and high dielectric constant, and is regarded as one of the most promising storage media. Of course, if it is possible to grow SiO on a silicon substrate 2 If high-quality lead titanate (PT)-base...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D7/24B05D1/36B05D3/02C04B35/462C04B35/472B32B9/00
Inventor 费维栋迟庆国李伟力
Owner HARBIN INST OF TECH
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