Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for fast synthesizing powder of stannum selenide quanta dots

A technology of tin selenide and quantum dots, applied in chemical instruments and methods, binary selenium/tellurium compounds, nanotechnology, etc., to achieve the effects of good safety, good monodispersity, and simple process

Inactive Publication Date: 2009-11-25
SHANGHAI UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The synthesized product is SnSe water-soluble quantum dots with good monodispersity, an average particle size of 2.5nm, and a band gap of 1.9eV. There is currently no report on the synthesis method of SnSe quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fast synthesizing powder of stannum selenide quanta dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Concrete preparation steps of the present invention are as follows:

[0020] a. First, use an electronic balance to weigh a certain amount of stannous chloride dihydrate and dissolve it in distilled water, then add excess sodium hydroxide solid, stir and mix until the solution is clear; then add cetyltrimethylammonium bromide (CTAB) as surfactant, the molar concentration ratio with tin ion is 6: 1, fully mix; Then add sodium selenite, make the molar concentration ratio of selenium atom and tin atom be 1: 1, stir and mix to make To a transparent sol, add isopropanol as an oxidizing free radical OH·scavenger, the amount of which is 6ml / 100ml, and then fully stir and mix the solution.

[0021] b. Place the above-mentioned airtight container containing the prepared mixed solution under the electron beam irradiation produced by an electron accelerator of 2.5 MeV and 7 mA for irradiation treatment. The irradiation doses are 14, 28, and 42 Mrad respectively. The time is 10, 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for fast synthesizing powder of stannum selenide quanta dots, belonging to the technical field of processing nanometer inorganic compound material of semiconductor. With stannous chloride dehydrate and sodium selenite as raw materials, cetyltrimethyl ammonium bromide as surfactant, and in the alkaline solution of sodium hydroxide, stannum selenide quanta dots are synthesized by being radiated by electron beams. The nanometer powder of stannum selenide is obtained after separating the synthesized product. The granular stannum selenide quanta dots of the invention have extremely good water solubility, good monodispersity, and even size with an average particle size of 2.5 nm and good photoelectric property.

Description

technical field [0001] The invention relates to a method for rapidly synthesizing tin selenide quantum dot powder by electron beam irradiation, and belongs to the technical field of nanometer inorganic compound semiconductor material manufacturing technology. Background technique [0002] Nanomaterials are the hotspots of current research, located at the forefront of science and technology, and their applications are spread across all walks of life. Semiconductor nanomaterials located in components IV-VI have been widely used due to their unique photoelectrochemical properties, so they have become a research hotspot in recent years. SnSe is a semiconductor of IV-VI composition. It has excellent electrical and optical properties. It is widely used in infrared photoelectric instruments and memory switches, thermoelectric cooling materials, optical filters, optical recording materials, solar cell materials, superionic materials, and sensors. And laser materials, solid phase me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B19/04C09K11/88B82B3/00
Inventor 李珍刘岩岩方耀国吴明红潘登余
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products