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Inductance coupling coil and plasma processing device adopting same

An inductively coupled coil and plasma technology, applied in the field of microelectronics, can solve problems such as unpredictable processing/processing results, changes in reaction conditions, and undesired results, and achieve uniform processing/processing results, improve quality, and reduce the effect of possibility

Active Publication Date: 2012-06-06
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the two-step method can meet both the RF power requirements required for ignition and the RF power requirements required for processing / processing, in practical applications, during the process of changing the RF power from high to low, the RF power occurs Changes lead to changes in the plasma environment, that is, changes in the reaction conditions
Thus, changes in reaction conditions will eventually lead to undesired or unpredictable processing / handling results

Method used

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  • Inductance coupling coil and plasma processing device adopting same
  • Inductance coupling coil and plasma processing device adopting same
  • Inductance coupling coil and plasma processing device adopting same

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Embodiment Construction

[0054] In order to enable those skilled in the art to better understand the technical solution of the present invention, the inductively coupled coil and the plasma processing device using the inductively coupled coil provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0055] see image 3 , the inductively coupled coil provided by the present invention includes an inner winding part 7 (corresponding to the inductance L 1 ) and the outer winding part 8 (corresponding to the inductance L 2 ), and the inner winding part 7 is connected in series with the adjustable capacitor 9 to form a first coil branch, the outer winding part 8 forms a second coil branch, and the first coil branch and the second coil branch are connected in parallel.

[0056] The working principle of the above-mentioned inductively coupled coil is as follows: in the plasma ignition stage, the adjustable capacitor 9 is adjusted so that its capacitanc...

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Abstract

The invention discloses an inductance coupling coil which comprises a first coil branch circuit and a second coil branch circuit mutually connected in parallel, wherein the first coil branch circuit comprises an inner circle winding part, the second coil branch circuit comprises an outer circle winding part, and the first coil branch circuit also comprises an adjustable capacitor connected with the inner circle winding part in series. In addition, the invention also discloses a plasma processing device which comprises a reaction chamber, wherein the upper part of the reaction chamber is provided with a medium window, and the inductance coupling coil is arranged above the medium window; and the first end of the inductance coupling coil is connected with a radio-frequency power supply by a radio-frequency matcher, and the second end of the inductance coupling coil is grounded so as to obtain uniformly distributed plasma in the reaction chamber. The inductance coupling coil and the plasmaprocessing device not only can generate the more uniformly distributed plasma at a stable electric discharge stage, but also can more easily realize plasma ignition at a plasma ignition stage.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an inductively coupled coil. In addition, the present invention also relates to a plasma processing device using the inductively coupled coil. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / handling of semiconductor devices, especially in the manufacturing process of IC (Integrated circuit, integrated circuit) or MEMS (Micro Electromechanical System, microelectromechanical system) devices, it is often necessary to use such methods as plasma etching, Plasma processing technology for deposition or other processes, and these technologies are usually realized by means of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F27/28H01F27/40H01G7/00H05H1/46H01L21/00
Inventor 韦刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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